Vishay EF Type N-Channel Power MOSFET, 13 A, 800 V, 3-Pin TO-247AC SIHG15N80AEF-GE3
- RS Stock No.:
- 225-9914
- Mfr. Part No.:
- SIHG15N80AEF-GE3
- Manufacturer:
- Vishay
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Units | Per Unit | Per Pack* |
|---|---|---|
| 5 - 5 | PHP185.40 | PHP927.00 |
| 10 - 20 | PHP168.648 | PHP843.24 |
| 25 + | PHP154.612 | PHP773.06 |
*price indicative
- RS Stock No.:
- 225-9914
- Mfr. Part No.:
- SIHG15N80AEF-GE3
- Manufacturer:
- Vishay
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Product Type | Power MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 13A | |
| Maximum Drain Source Voltage Vds | 800V | |
| Package Type | TO-247AC | |
| Series | EF | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 350mΩ | |
| Maximum Power Dissipation Pd | 156W | |
| Typical Gate Charge Qg @ Vgs | 53nC | |
| Maximum Gate Source Voltage Vgs | 30V | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 1.2V | |
| Maximum Operating Temperature | 150°C | |
| Width | 2.39mm | |
| Standards/Approvals | RoHS | |
| Height | 10.41mm | |
| Length | 6.73mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Vishay | ||
Product Type Power MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 13A | ||
Maximum Drain Source Voltage Vds 800V | ||
Package Type TO-247AC | ||
Series EF | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 350mΩ | ||
Maximum Power Dissipation Pd 156W | ||
Typical Gate Charge Qg @ Vgs 53nC | ||
Maximum Gate Source Voltage Vgs 30V | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 1.2V | ||
Maximum Operating Temperature 150°C | ||
Width 2.39mm | ||
Standards/Approvals RoHS | ||
Height 10.41mm | ||
Length 6.73mm | ||
Automotive Standard No | ||
Vishay Series EF Power MOSFET, 800V Drain Source Voltage, 13A Continuous Drain Current - SIHG15N80AEF-GE3
This power MOSFET is a high-voltage N-channel switching device designed for demanding power-electronic environments. It is intended for use where robust high-voltage handling and significant continuous current capability are required, operating across a wide ambient temperature range and supplied in a TO-247AC package for mounting on surfaces.
Features and Benefits:
• 800V drain-to-source rating enables high-voltage system integration
• 13A continuous drain current supports moderate power throughput
• 350mΩ low Rds(on) reduces conduction losses during operation
• 156W power dissipation allows sustained thermal loading
• 53nC typical gate charge facilitates predictable switching performance
• ±30V gate tolerance permits wide control-voltage flexibility
• 13A continuous drain current supports moderate power throughput
• 350mΩ low Rds(on) reduces conduction losses during operation
• 156W power dissipation allows sustained thermal loading
• 53nC typical gate charge facilitates predictable switching performance
• ±30V gate tolerance permits wide control-voltage flexibility
Applications
• Used for high-voltage power conversion stages
• Suitable for industrial motor drive switching
• Ideal for switch-mode power supplies in energy systems
• Can be used for clamped inductive load switching
• Used with gate drivers for fast-switching topologies
• Suitable for industrial motor drive switching
• Ideal for switch-mode power supplies in energy systems
• Can be used for clamped inductive load switching
• Used with gate drivers for fast-switching topologies
What temperature extremes can it withstand in operation?
It is rated for continuous operation from -55°C up to 150°C, allowing use in both cold and high-temperature environments.
How does the package affect thermal and mounting choices?
The TO-247AC surface package provides a large thermal pad area suitable for heatsinking and straightforward solder or clip mounting to manage dissipation.
What gate-drive constraints should be observed?
The device tolerates gate-source voltages up to 30V, so gate drivers should be selected to stay within that limit to avoid gate overstress.
What forward conduction behaviour can be expected during switching transitions?
The forward voltage is specified at 1.2V, which informs predicted conduction voltage drop during the on-state and helps size snubbers or clamp networks.
Related links
- Vishay EF Type N-Channel MOSFET 800 V, 3-Pin TO-247
- Vishay EF Type N-Channel Single MOSFETs 800 V Enhancement, 3-Pin TO-220AB
- Vishay EF Type N-Channel Single MOSFETs 800 V Enhancement, 3-Pin TO-247AC
- Vishay EF Type N-Channel MOSFET 600 V Enhancement, 3-Pin TO-247
- Vishay EF Type N-Channel MOSFET 650 V Depletion, 3-Pin TO-247
- Vishay EF Type N-Channel MOSFET 600 V Enhancement, 3-Pin TO-247
- Vishay EF Type N-Channel MOSFET 600 V Enhancement, 3-Pin TO-247
- Vishay EF Type N-Channel Single MOSFETs 800 V Enhancement, 3-Pin TO-220AB SIHP11N80AEF-GE3