Vishay SIH Type N-Channel MOSFET, 20 A, 800 V, 3-Pin TO-220AB SIHP24N80AEF-GE3
- RS Stock No.:
- 239-5382
- Mfr. Part No.:
- SIHP24N80AEF-GE3
- Manufacturer:
- Vishay
This image is representative of the product range
Bulk discount available
Subtotal (1 tube of 50 units)*
PHP8,208.00
(exc. VAT)
PHP9,193.00
(inc. VAT)
FREE delivery for orders over ₱3,000.00
In Stock
- 850 unit(s) ready to ship from another location
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per Unit | Per Tube* |
|---|---|---|
| 50 - 50 | PHP164.16 | PHP8,208.00 |
| 100 - 450 | PHP142.467 | PHP7,123.35 |
| 500 - 950 | PHP120.775 | PHP6,038.75 |
| 1000 + | PHP102.60 | PHP5,130.00 |
*price indicative
- RS Stock No.:
- 239-5382
- Mfr. Part No.:
- SIHP24N80AEF-GE3
- Manufacturer:
- Vishay
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 20A | |
| Maximum Drain Source Voltage Vds | 800V | |
| Series | SIH | |
| Package Type | TO-220AB | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 0.19Ω | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 208W | |
| Typical Gate Charge Qg @ Vgs | 90nC | |
| Forward Voltage Vf | 1.2V | |
| Maximum Gate Source Voltage Vgs | ±30 V | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | RoHS | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Vishay | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 20A | ||
Maximum Drain Source Voltage Vds 800V | ||
Series SIH | ||
Package Type TO-220AB | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 0.19Ω | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 208W | ||
Typical Gate Charge Qg @ Vgs 90nC | ||
Forward Voltage Vf 1.2V | ||
Maximum Gate Source Voltage Vgs ±30 V | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals RoHS | ||
Automotive Standard No | ||
The Vishay EF series power MOSFET has drain current of 20 A. It is used for server and telecom power supplies, switch mode power supplies (SMPS), power factor correction power supplies (PFC)
Low figure-of-merit (FOM) Ron x Qg
Low effective capacitance (Co(er))
Reduced switching and conduction losses
Avalanche energy rated
Related links
- Vishay SIH Type N-Channel MOSFET 800 V, 3-Pin TO-220AB SIHP24N80AEF-GE3
- Vishay SIH Type N-Channel MOSFET 850 V TO-247AC SIHG24N80AEF-GE3
- Vishay EF Type N-Channel Single MOSFETs 800 V Enhancement, 3-Pin TO-220AB
- Vishay EF Type N-Channel Single MOSFETs 800 V Enhancement, 3-Pin TO-220AB SIHP11N80AEF-GE3
- Vishay Type N-Channel Power MOSFET 500 V Enhancement, 3-Pin TO-220AB
- Vishay Type N-Channel Power MOSFET 400 V Enhancement, 3-Pin TO-220AB
- Vishay Single EF 1 Type N-Channel Power MOSFET 600 V, 3-Pin TO-220AB
- Vishay Single E 1 Type N-Channel Power MOSFET 500 V, 3-Pin TO-220AB
