Vishay EF Type N-Channel Power MOSFET, 8 A, 800 V Enhancement, 3-Pin TO-220AB SIHP11N80AEF-GE3
- RS Stock No.:
- 653-139
- Mfr. Part No.:
- SIHP11N80AEF-GE3
- Manufacturer:
- Vishay
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PHP6,231.25
(exc. VAT)
PHP6,979.00
(inc. VAT)
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- Plus 1,000 unit(s) shipping from August 10, 2026
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Units | Per Unit | Per Tube* |
|---|---|---|
| 50 - 200 | PHP124.625 | PHP6,231.25 |
| 250 + | PHP122.137 | PHP6,106.85 |
*price indicative
- RS Stock No.:
- 653-139
- Mfr. Part No.:
- SIHP11N80AEF-GE3
- Manufacturer:
- Vishay
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Product Type | Power MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 8A | |
| Maximum Drain Source Voltage Vds | 800V | |
| Package Type | TO-220AB | |
| Series | EF | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 0.483Ω | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 27nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 78W | |
| Forward Voltage Vf | 1.2V | |
| Maximum Gate Source Voltage Vgs | 30V | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | RoHS | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Vishay | ||
Product Type Power MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 8A | ||
Maximum Drain Source Voltage Vds 800V | ||
Package Type TO-220AB | ||
Series EF | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 0.483Ω | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 27nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 78W | ||
Forward Voltage Vf 1.2V | ||
Maximum Gate Source Voltage Vgs 30V | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals RoHS | ||
Automotive Standard No | ||
Vishay Series EF Power MOSFET, 800V Drain Source Voltage, 8A Continuous Drain Current - SIHP11N80AEF-GE3
This power MOSFET is a high-voltage N-channel transistor designed for switching and amplification in demanding electronic systems. It operates over a wide temperature span and fits a through-hole TO-220AB package, making it suitable for repairs, prototype boards and production assemblies where a robust, mountable device is required. The component is RoHS-compliant and intended for enhancement-mode applications requiring substantial voltage handling and moderate current.
Features and Benefits:
• 800V drain-source rating enables high-voltage switching
• 8A continuous drain current supports sustained load conduction
• 0.483Ω Rds(on) reduces conduction losses during operation
• 78W power dissipation capacity tolerates elevated thermal load
• 27nC typical gate charge gives predictable switching behaviour
• ±30V gate tolerance permits high gate-drive amplitudes
• 8A continuous drain current supports sustained load conduction
• 0.483Ω Rds(on) reduces conduction losses during operation
• 78W power dissipation capacity tolerates elevated thermal load
• 27nC typical gate charge gives predictable switching behaviour
• ±30V gate tolerance permits high gate-drive amplitudes
Applications
• Suitable for high-voltage power supplies and converters
• Ideal for motor-drive stages with medium current requirements
• Used with industrial switching circuits exposed to heat
• Can be used for battery-charger and inverter topologies
• Suited to through-hole hardware repair and retrofit projects
• Ideal for motor-drive stages with medium current requirements
• Used with industrial switching circuits exposed to heat
• Can be used for battery-charger and inverter topologies
• Suited to through-hole hardware repair and retrofit projects
What temperature range will it function within?
It is rated to operate from -55°C up to 150°C, permitting use in environments with large thermal variations.
How should it be mounted for effective heat management?
The TO-220AB through-hole package allows attachment to a heatsink for improved thermal dissipation and stable power handling.
What gate-drive considerations are required?
The device is gate-rated to ±30V, so gate drivers should be selected to provide appropriate voltage without exceeding this limit.
Is it suitable for automotive-standard designs?
It is not specified to meet automotive standards, so designs requiring automotive qualification should consider that limitation.
Related links
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