Vishay EF Type N-Channel MOSFET, 18 A, 650 V Enhancement, 3-Pin TO-220

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Subtotal (1 pack of 10 units)*

PHP1,524.60

(exc. VAT)

PHP1,707.60

(inc. VAT)

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Units
Per Unit
Per Pack*
10 +PHP152.46PHP1,524.60

*price indicative

RS Stock No.:
200-6819
Mfr. Part No.:
SIHP186N60EF-GE3
Manufacturer:
Vishay
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Brand

Vishay

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

18A

Maximum Drain Source Voltage Vds

650V

Package Type

TO-220

Series

EF

Mount Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance Rds

193mΩ

Channel Mode

Enhancement

Maximum Power Dissipation Pd

156W

Forward Voltage Vf

1.2V

Minimum Operating Temperature

-55°C

Maximum Gate Source Voltage Vgs

30 V

Typical Gate Charge Qg @ Vgs

32nC

Maximum Operating Temperature

150°C

Length

10.52mm

Standards/Approvals

No

Width

4.65 mm

Height

14.4mm

Automotive Standard

No

The Vishay SIHP186N60EF-GE3 is a EF series power MOSFET with fast body diode.

4th generation E series technology

Low figure-of-merit

Low effective capacitance

Reduced switching and conduction losses

Avalanche energy rated (UIS)

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