Vishay EF Type N-Channel Power MOSFET, 18 A, 650 V Enhancement, 3-Pin TO-220AB SIHP186N60EF-GE3

RS Stock No.:: 200-6818
Mfr. Part No.:: SIHP186N60EF-GE3
Manufacturer:: Vishay

Vishay EF Type N-Channel Power MOSFET, 18 A, 650 V Enhancement, 3-Pin TO-220AB SIHP186N60EF-GE3

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Subtotal (1 reel of 50 units)*

PHP9,460.50

(exc. VAT)

PHP10,596.00

(inc. VAT)

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Plus 950 unit(s) shipping from August 10, 2026

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Units	Per Unit	Per Reel*
50 +	PHP189.21	PHP9,460.50

*price indicative

RS Stock No.:: 200-6818
Mfr. Part No.:: SIHP186N60EF-GE3
Manufacturer:: Vishay

Specifications

Technical data sheets

Legislation and Compliance

Product Details

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	Brand	Vishay
	Channel Type	Type N
	Product Type	Power MOSFET
	Maximum Continuous Drain Current Id	18A
	Maximum Drain Source Voltage Vds	650V
	Series	EF
	Package Type	TO-220AB
	Mount Type	Through Hole
	Pin Count	3
	Maximum Drain Source Resistance Rds	193mΩ
	Channel Mode	Enhancement
	Minimum Operating Temperature	-55°C
	Maximum Power Dissipation Pd	156W
	Typical Gate Charge Qg @ Vgs	32nC
	Maximum Gate Source Voltage Vgs	30V
	Forward Voltage Vf	1.2V
	Maximum Operating Temperature	150°C
	Length	10.52mm
	Width	4.65mm
	Standards/Approvals	RoHS
	Height	14.4mm
	Automotive Standard	No

	Select all
	Brand Vishay
	Channel Type Type N
	Product Type Power MOSFET
	Maximum Continuous Drain Current Id 18A
	Maximum Drain Source Voltage Vds 650V
	Series EF
	Package Type TO-220AB
	Mount Type Through Hole
	Pin Count 3
	Maximum Drain Source Resistance Rds 193mΩ
	Channel Mode Enhancement
	Minimum Operating Temperature -55°C
	Maximum Power Dissipation Pd 156W
	Typical Gate Charge Qg @ Vgs 32nC
	Maximum Gate Source Voltage Vgs 30V
	Forward Voltage Vf 1.2V
	Maximum Operating Temperature 150°C
	Length 10.52mm
	Width 4.65mm
	Standards/Approvals RoHS
	Height 14.4mm
	Automotive Standard No

Document- SIHP186N60EF-GE3

Vishay Series EF Power MOSFET, 650V Drain Source Voltage, 18A Continuous Drain Current - SIHP186N60EF-GE3

This power MOSFET is a high-voltage, enhancement-mode N-channel transistor designed for switching and power conversion tasks in through-hole assemblies. It operates across a broad temperature span and is constructed to meet RoHS environmental restrictions, making it suitable for demanding thermal and regulatory contexts where a robust 650V switching device is required.

Features and Benefits:

• 650V drain-source rating enables high-voltage switching
• 18A continuous current supports significant load handling
• 193mΩ Rds(on) reduces conduction losses during operation
• 156W power dissipation allows sustained power handling
• 32nC gate charge facilitates efficient switching control
• 30V gate tolerance permits compatibility with common drivers

Applications

• Ideal for high-voltage DC-DC converters in power supplies
• Suitable for industrial motor drive switching stages
• Used with inverter front-end circuits requiring 650V devices
• Can be used for solid-state relays handling medium currents
• Suitable for power factor correction and EMI-prone systems

What packaging and mounting approach does it require?

It is supplied in a TO-220AB package configured for through-hole mounting, allowing straightforward heatsinking and panel attachment.

How does it behave across extreme temperatures?

The device is specified to operate from -55°C up to 150°C, permitting use in environments with wide thermal variation without derating the specified voltage class.

What gate driving considerations are necessary?

The maximum gate-source rating is 30V and the typical total gate charge is 32nC, so gate drivers should provide sufficient peak current for targeted switching speeds while not exceeding 30V.

Is it suitable for automotive electronics?

It is not classified to automotive standards

selection should consider industry-specific qualification where vehicle-grade approval is required.