Infineon CoolMOS Type N-Channel MOSFET, 111 A, 650 V Enhancement, 3-Pin TO-247 IPW60R018CFD7XKSA1

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PHP951.59

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PHP1,065.78

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1 - 9PHP951.59
10 - 99PHP872.37
100 - 249PHP805.32
250 - 499PHP748.18
500 +PHP726.84

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Packaging Options:
RS Stock No.:
222-4719
Mfr. Part No.:
IPW60R018CFD7XKSA1
Manufacturer:
Infineon
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Brand

Infineon

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

111A

Maximum Drain Source Voltage Vds

650V

Package Type

TO-247

Series

CoolMOS

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

18mΩ

Channel Mode

Enhancement

Typical Gate Charge Qg @ Vgs

251nC

Minimum Operating Temperature

-55°C

Maximum Gate Source Voltage Vgs

20 V

Maximum Power Dissipation Pd

416W

Forward Voltage Vf

1V

Maximum Operating Temperature

150°C

Length

16.13mm

Height

5.21mm

Standards/Approvals

No

Width

21.1 mm

Automotive Standard

No

The Infineon design of Cool MOS is a revolutionary technology for high voltage power MOSFETs, designed according to the super junction (SJ) principle and pioneered by Infineon Technologies. 600V Cool MOS™ C7 series combines the experience of the leading SJ MOSFET supplier with high class innovation. The 600V C7 is the first technology ever with RDS(on)*A below 1Ohm*mm².

Pb-free lead plating; RoHS compliant

Superior thermal resistance 100% avalanche tested

Halogen-free according to IEC61249-2-23

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