Infineon OptiMOS Type N-Channel MOSFET & Diode, 30 A, 60 V Enhancement, 3-Pin TO-252 IPD30N06S4L23ATMA2

RS Stock No.:: 220-7404
Mfr. Part No.:: IPD30N06S4L23ATMA2
Manufacturer:: Infineon

Infineon OptiMOS Type N-Channel MOSFET & Diode, 30 A, 60 V Enhancement, 3-Pin TO-252 IPD30N06S4L23ATMA2

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Bulk discount available

Subtotal (1 pack of 20 units)*

PHP463.60

(exc. VAT)

PHP519.20

(inc. VAT)

FREE delivery for orders over ₱3,000.00

In Stock

500 unit(s) ready to ship from another location

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Units	Per Unit	Per Pack*
20 - 20	PHP23.18	PHP463.60
40 - 80	PHP22.485	PHP449.70
100 - 220	PHP21.81	PHP436.20
240 - 480	PHP21.156	PHP423.12
500 +	PHP20.521	PHP410.42

*price indicative

RS Stock No.:: 220-7404
Mfr. Part No.:: IPD30N06S4L23ATMA2
Manufacturer:: Infineon

Specifications

Technical data sheets

Legislation and Compliance

Product Details

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	Brand	Infineon
	Channel Type	Type N
	Product Type	MOSFET & Diode
	Maximum Continuous Drain Current Id	30A
	Maximum Drain Source Voltage Vds	60V
	Package Type	TO-252
	Series	OptiMOS
	Mount Type	Surface
	Pin Count	3
	Maximum Drain Source Resistance Rds	23mΩ
	Channel Mode	Enhancement
	Minimum Operating Temperature	-55°C
	Maximum Gate Source Voltage Vgs	16 V
	Maximum Power Dissipation Pd	36W
	Forward Voltage Vf	1.3V
	Typical Gate Charge Qg @ Vgs	16.1nC
	Maximum Operating Temperature	175°C
	Width	6.22 mm
	Length	6.73mm
	Standards/Approvals	No
	Height	2.41mm
	Automotive Standard	AEC-Q101

	Select all
	Brand Infineon
	Channel Type Type N
	Product Type MOSFET & Diode
	Maximum Continuous Drain Current Id 30A
	Maximum Drain Source Voltage Vds 60V
	Package Type TO-252
	Series OptiMOS
	Mount Type Surface
	Pin Count 3
	Maximum Drain Source Resistance Rds 23mΩ
	Channel Mode Enhancement
	Minimum Operating Temperature -55°C
	Maximum Gate Source Voltage Vgs 16 V
	Maximum Power Dissipation Pd 36W
	Forward Voltage Vf 1.3V
	Typical Gate Charge Qg @ Vgs 16.1nC
	Maximum Operating Temperature 175°C
	Width 6.22 mm
	Length 6.73mm
	Standards/Approvals No
	Height 2.41mm
	Automotive Standard AEC-Q101

Datasheet - IPD30N06S4L23ATMA2

The Infineon offers a wide range of 55V-60V N-channel automotive qualified power MOSFETs using the new OptiMOS technology in a variety of packages and ranging RDS(on) from 1.5mΩ up to 160mΩThe new 60V automotive MOSFET family with OptiMOS5 technology delivers more power and leading performance. OptiMOS 5 provides reduced conduction losses optimized for drives and power conversion applications. The smaller leadless packages SSO8 (5x6mm2) and S3O8(3x3mm2) enable space savings by more than 50% compared to the area of a DPAK.

N-channel - Enhancement mode

AEC Q101 qualified

MSL1 up to 260°C peak reflow

175°C operating temperature

Green Product (RoHS compliant)

100% Avalanche tested

world's lowest RDS at 60V (on)

highest current capability

lowest switching and conduction power losses for highest thermal efficiency

robust packages with superior quality and reliability

Optimized total gate charge enables smaller driver output stages

Infineon OptiMOS Type N-Channel MOSFET & Diode, 30 A, 60 V Enhancement, 3-Pin TO-252 IPD30N06S4L23ATMA2

FREE delivery for orders over ₱3,000.00

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