Infineon OptiMOS Type N-Channel MOSFET & Diode, 40 A, 60 V Enhancement, 8-Pin TSDSON
- RS Stock No.:
- 220-7361
- Mfr. Part No.:
- BSZ100N06NSATMA1
- Manufacturer:
- Infineon
This image is representative of the product range
Bulk discount available
Subtotal (1 reel of 5000 units)*
PHP93,100.00
(exc. VAT)
PHP104,250.00
(inc. VAT)
FREE delivery for orders over ₱3,000.00
Temporarily out of stock
- Shipping from May 25, 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per Unit | Per Reel* |
|---|---|---|
| 5000 - 5000 | PHP18.62 | PHP93,100.00 |
| 10000 - 10000 | PHP18.061 | PHP90,305.00 |
| 15000 + | PHP17.52 | PHP87,600.00 |
*price indicative
- RS Stock No.:
- 220-7361
- Mfr. Part No.:
- BSZ100N06NSATMA1
- Manufacturer:
- Infineon
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Product Type | MOSFET & Diode | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 40A | |
| Maximum Drain Source Voltage Vds | 60V | |
| Series | OptiMOS | |
| Package Type | TSDSON | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 1mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 12nC | |
| Maximum Power Dissipation Pd | 36W | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Forward Voltage Vf | 1.2V | |
| Maximum Operating Temperature | 150°C | |
| Width | 6.1 mm | |
| Standards/Approvals | No | |
| Height | 1.2mm | |
| Length | 5.35mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Product Type MOSFET & Diode | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 40A | ||
Maximum Drain Source Voltage Vds 60V | ||
Series OptiMOS | ||
Package Type TSDSON | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 1mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 12nC | ||
Maximum Power Dissipation Pd 36W | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Forward Voltage Vf 1.2V | ||
Maximum Operating Temperature 150°C | ||
Width 6.1 mm | ||
Standards/Approvals No | ||
Height 1.2mm | ||
Length 5.35mm | ||
Automotive Standard No | ||
The Infineon OptiMOS 5 60V is optimized for synchronous rectification in switched mode power supplies (SMPS) such as those found in servers and desktops and tablet charger. In addition these devices are a perfect choice for a broad range of industrial applications including motor control, solar micro inverter and fast switching DC-DC converter.
Optimized for synchronous rectification
40% lower R DS(on) than alternative devices
40% improvement of FOM over similar devices
RoHS compliant - halogen free
MSL1 rated
Highest system efficiency
Less paralleling required
Increased power density
System cost reduction
Very low voltage overshoot
Related links
- Infineon OptiMOS Type N-Channel MOSFET & Diode 60 V Enhancement, 8-Pin TSDSON BSZ100N06NSATMA1
- Infineon OptiMOS Type N-Channel MOSFET & Diode 40 V Enhancement, 8-Pin TSDSON
- Infineon OptiMOS Type N-Channel MOSFET & Diode 40 V Enhancement, 8-Pin TSDSON IPZ40N04S5L4R8ATMA1
- Infineon OptiMOS Type N-Channel MOSFET 25 V Enhancement, 8-Pin TSDSON
- Infineon OptiMOS Type N-Channel MOSFET 30 V Enhancement, 8-Pin TSDSON
- Infineon OptiMOS Type N-Channel MOSFET 40 V Enhancement, 8-Pin TSDSON
- Infineon OptiMOS Type N-Channel MOSFET 25 V Enhancement, 8-Pin TSDSON
- Infineon OptiMOS Type N-Channel MOSFET 30 V Enhancement, 8-Pin TSDSON BSZ0904NSIATMA1