Infineon OptiMOS Type N-Channel MOSFET, 40 A, 30 V Enhancement, 8-Pin TSDSON BSZ0904NSIATMA1
- RS Stock No.:
- 825-9089
- Mfr. Part No.:
- BSZ0904NSIATMA1
- Manufacturer:
- Infineon
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Subtotal (1 pack of 20 units)*
PHP815.76
(exc. VAT)
PHP913.66
(inc. VAT)
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- 4,980 unit(s) ready to ship from another location
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Units | Per Unit | Per Pack* |
|---|---|---|
| 20 - 480 | PHP40.788 | PHP815.76 |
| 500 - 980 | PHP39.565 | PHP791.30 |
| 1000 - 2480 | PHP37.191 | PHP743.82 |
| 2500 - 4980 | PHP33.843 | PHP676.86 |
| 5000 + | PHP29.782 | PHP595.64 |
*price indicative
- RS Stock No.:
- 825-9089
- Mfr. Part No.:
- BSZ0904NSIATMA1
- Manufacturer:
- Infineon
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 40A | |
| Maximum Drain Source Voltage Vds | 30V | |
| Series | OptiMOS | |
| Package Type | TSDSON | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 5.7mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 8.5nC | |
| Maximum Power Dissipation Pd | 37W | |
| Forward Voltage Vf | 0.56V | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Height | 1.1mm | |
| Length | 3.4mm | |
| Width | 3.4 mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 40A | ||
Maximum Drain Source Voltage Vds 30V | ||
Series OptiMOS | ||
Package Type TSDSON | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 5.7mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 8.5nC | ||
Maximum Power Dissipation Pd 37W | ||
Forward Voltage Vf 0.56V | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Height 1.1mm | ||
Length 3.4mm | ||
Width 3.4 mm | ||
Automotive Standard No | ||
RoHS Status: Not Applicable
Infineon OptiMOS™ Power MOSFET Family
OptiMOS™ products are available in high performance packages to tackle the most challenging applications giving full flexibility in limited spaces. These Infineon products are designed to meet and exceed the energy efficiency and power density requirements of the sharpened next generation voltage regulation standards in computing applications.
N-channel - Enhancement mode
Automotive AEC Q101 qualified
MSL1 up to 260°C Peak reflow
175°C operating temperature
Green package (lead free)
Ultra low Rds(on)
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
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