Infineon OptiMOS-T2 Type N-Channel MOSFET, 86 A, 40 V Enhancement, 3-Pin TO-252 IPD90N04S405ATMA1

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PHP560.31

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PHP627.54

(inc. VAT)

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Per Pack*
15 - 15PHP37.354PHP560.31
30 - 75PHP34.247PHP513.71
90 - 225PHP31.574PHP473.61
240 - 465PHP29.336PHP440.04
480 +PHP28.528PHP427.92

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Packaging Options:
RS Stock No.:
218-3053
Mfr. Part No.:
IPD90N04S405ATMA1
Manufacturer:
Infineon
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Brand

Infineon

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

86A

Maximum Drain Source Voltage Vds

40V

Series

OptiMOS-T2

Package Type

TO-252

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

5.2mΩ

Channel Mode

Enhancement

Minimum Operating Temperature

-55°C

Maximum Gate Source Voltage Vgs

20 V

Typical Gate Charge Qg @ Vgs

29nC

Maximum Power Dissipation Pd

65W

Forward Voltage Vf

1.3V

Maximum Operating Temperature

175°C

Standards/Approvals

No

Height

2.41mm

Length

6.73mm

Width

6.22 mm

Automotive Standard

AEC-Q101

The Infineon OptiMOS™-T2 series N-channel automotive MOSFET integrated with DPAK (TO-252) type package. It has low switching and conduction power losses.

N-channel - Enhancement mode

MSL1 up to 260°C peak reflow

175°C operating temperature

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