Infineon OptiMOS-T2 Type N-Channel MOSFET, 90 A, 40 V Enhancement, 3-Pin TO-252
- RS Stock No.:
- 214-9054
- Mfr. Part No.:
- IPD90N04S403ATMA1
- Manufacturer:
- Infineon
This image is representative of the product range
Bulk discount available
Subtotal (1 reel of 2500 units)*
PHP98,980.00
(exc. VAT)
PHP110,857.50
(inc. VAT)
FREE delivery for orders over ₱3,000.00
In Stock
- 15,000 unit(s) ready to ship from another location
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per Unit | Per Reel* |
|---|---|---|
| 2500 - 2500 | PHP39.592 | PHP98,980.00 |
| 5000 - 5000 | PHP38.069 | PHP95,172.50 |
| 7500 + | PHP37.587 | PHP93,967.50 |
*price indicative
- RS Stock No.:
- 214-9054
- Mfr. Part No.:
- IPD90N04S403ATMA1
- Manufacturer:
- Infineon
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 90A | |
| Maximum Drain Source Voltage Vds | 40V | |
| Package Type | TO-252 | |
| Series | OptiMOS-T2 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 3.2mΩ | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 1.3V | |
| Maximum Power Dissipation Pd | 94W | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 51nC | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | No | |
| Length | 6.5mm | |
| Width | 6.22 mm | |
| Height | 2.3mm | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 90A | ||
Maximum Drain Source Voltage Vds 40V | ||
Package Type TO-252 | ||
Series OptiMOS-T2 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 3.2mΩ | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 1.3V | ||
Maximum Power Dissipation Pd 94W | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 51nC | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals No | ||
Length 6.5mm | ||
Width 6.22 mm | ||
Height 2.3mm | ||
Automotive Standard AEC-Q101 | ||
The Infineon range of new OptiMOS -T2 has a range of energy efficient MOSFET transistors with CO2 reduction and electric drives. The new OptiMOS -T2 product family extends the existing families of OptiMOS -T and OptiMOS. OptiMOS products are available in high performance packages to tackle the most challenging applications giving full flexibility in limited spaces. These Infineon products are designed to meet and exceed the energy efficiency and power density requirements of the sharpened next generation voltage regulation standards in computing applications.
It is Automotive AEC Q101 qualified
100% Avalanche tested
It has 175°C operating temperature
Related links
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