Infineon OptiMOS-T2 Type N-Channel MOSFET, 25 A, 60 V Enhancement, 3-Pin TO-252 IPD25N06S4L30ATMA2

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PHP629.64

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PHP705.20

(inc. VAT)

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Units
Per Unit
Per Pack*
20 - 20PHP31.482PHP629.64
40 - 80PHP28.872PHP577.44
100 - 220PHP26.663PHP533.26
240 - 480PHP24.755PHP495.10
500 +PHP24.052PHP481.04

*price indicative

Packaging Options:
RS Stock No.:
215-2504
Mfr. Part No.:
IPD25N06S4L30ATMA2
Manufacturer:
Infineon
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Brand

Infineon

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

25A

Maximum Drain Source Voltage Vds

60V

Series

OptiMOS-T2

Package Type

TO-252

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

300mΩ

Channel Mode

Enhancement

Maximum Gate Source Voltage Vgs

20 V

Maximum Power Dissipation Pd

29W

Typical Gate Charge Qg @ Vgs

16.3nC

Minimum Operating Temperature

-55°C

Forward Voltage Vf

1.3V

Maximum Operating Temperature

150°C

Standards/Approvals

No

Automotive Standard

No

The Infineon OptiMOS®-T2 Power-Transistor has 60V maximum drain source voltage, N-Ch, Automotive MOSFET, with DPAK(TO-252) package type.

N-channel - Enhancement mode

AEC Q101 qualified

MSL1 up to 260°C peak reflow

175°C operating temperature

Green Product (RoHS compliant)

100% Avalanche tested

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