Infineon OptiMOS-T2 Type N-Channel MOSFET, 25 A, 60 V Enhancement, 3-Pin TO-252 IPD25N06S4L30ATMA2
- RS Stock No.:
- 215-2504
- Mfr. Part No.:
- IPD25N06S4L30ATMA2
- Manufacturer:
- Infineon
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Units | Per Unit | Per Pack* |
|---|---|---|
| 20 - 20 | PHP51.71 | PHP1,034.20 |
| 40 - 80 | PHP50.16 | PHP1,003.20 |
| 100 - 220 | PHP48.654 | PHP973.08 |
| 240 - 480 | PHP47.194 | PHP943.88 |
| 500 + | PHP45.779 | PHP915.58 |
*price indicative
- RS Stock No.:
- 215-2504
- Mfr. Part No.:
- IPD25N06S4L30ATMA2
- Manufacturer:
- Infineon
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 25A | |
| Maximum Drain Source Voltage Vds | 60V | |
| Series | OptiMOS-T2 | |
| Package Type | TO-252 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 300mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 16.3nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Maximum Power Dissipation Pd | 29W | |
| Forward Voltage Vf | 1.3V | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 25A | ||
Maximum Drain Source Voltage Vds 60V | ||
Series OptiMOS-T2 | ||
Package Type TO-252 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 300mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 16.3nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 20V | ||
Maximum Power Dissipation Pd 29W | ||
Forward Voltage Vf 1.3V | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Automotive Standard No | ||
Infineon OptiMOS-T2 Series MOSFET, 60V Maximum Drain Source Voltage, 25A Maximum Continuous Drain Current - IPD25N06S4L30ATMA2
This MOSFET is a power-switching transistor designed for surface-mount applications where robust current handling and a wide temperature range are required. It operates as an enhancement-mode N-channel device and is suited to circuits needing controlled conduction between drain and source under applied gate drive. The component is presented in a TO-252 package for PCB mounting and accommodates typical gate-drive voltages used in discrete power stages.
Features and Benefits:
• 60V drain voltage rating enables mid-voltage system use
• 25A continuous current supports high-load switching
• 300 mΩ maximum Rds(on) reduces conduction losses
• 29W maximum power dissipation handles thermal stress
• 16.3 nC typical gate charge enables faster switching
• ±20V gate-voltage rating tolerates common gate excursions
• 25A continuous current supports high-load switching
• 300 mΩ maximum Rds(on) reduces conduction losses
• 29W maximum power dissipation handles thermal stress
• 16.3 nC typical gate charge enables faster switching
• ±20V gate-voltage rating tolerates common gate excursions
Applications
• Suitable for DC-DC converter switch stages
• Ideal for synchronous rectification in power supplies
• Used with motor-drive half-bridge configurations
• Can be used for battery-management switching elements
• Appropriate for general-purpose low-voltage power switching
• Ideal for synchronous rectification in power supplies
• Used with motor-drive half-bridge configurations
• Can be used for battery-management switching elements
• Appropriate for general-purpose low-voltage power switching
What ambient temperatures can it withstand during operation?
It functions across a broad range from -55 °C up to 150 °C, allowing deployment in severe thermal environments.
How does the gate-charge value influence switching performance?
A typical gate charge of 16.3 nC determines the drive energy required and impacts switching speed and driver sizing for efficient transitions.
What mounting considerations are relevant for thermal management?
The TO-252 surface-mount package requires adequate copper-pad area and thermal vias on the PCB to disperse heat and meet the 29W dissipation capability.
What gate-drive amplitude is permitted for safe operation?
The device accepts gate voltages up to ±20V, which sets the maximum allowable drive to avoid gate overstress.
Related links
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