Infineon 600V CoolMOS P7 Type N-Channel MOSFET, 9 A, 650 V N, 3-Pin TO-220
- RS Stock No.:
- 218-3016
- Mfr. Part No.:
- IPAW60R360P7SXKSA1
- Manufacturer:
- Infineon
This image is representative of the product range
Bulk discount available
Subtotal (1 tube of 45 units)*
PHP2,890.305
(exc. VAT)
PHP3,237.12
(inc. VAT)
FREE delivery for orders over ₱3,000.00
In Stock
- 360 unit(s) ready to ship from another location
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per Unit | Per Tube* |
|---|---|---|
| 45 - 90 | PHP64.229 | PHP2,890.31 |
| 135 - 180 | PHP61.632 | PHP2,773.44 |
| 225 + | PHP60.066 | PHP2,702.97 |
*price indicative
- RS Stock No.:
- 218-3016
- Mfr. Part No.:
- IPAW60R360P7SXKSA1
- Manufacturer:
- Infineon
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 9A | |
| Maximum Drain Source Voltage Vds | 650V | |
| Package Type | TO-220 | |
| Series | 600V CoolMOS P7 | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 360mΩ | |
| Channel Mode | N | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 9A | ||
Maximum Drain Source Voltage Vds 650V | ||
Package Type TO-220 | ||
Series 600V CoolMOS P7 | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 360mΩ | ||
Channel Mode N | ||
Standards/Approvals No | ||
Automotive Standard No | ||
The Infineon 600V CoolMOS™ P7 series N-channel power MOSFET. It has extremely low switching and conduction losses which makes switching applications even more efficient, more compact and much cooler. The CoolMOS™ 7th generation platform is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies.
Suitable for hard and soft switching (PFC and LLC) due to an outstanding commutation ruggedness
Significant reduction of switching and conduction losses
Excellent ESD robustness >2kV (HBM) for all products
Related links
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