Infineon CoolMOS P7 Type N-Channel MOSFET, 29 A, 600 V Enhancement, 3-Pin TO-247 IPW60R120P7XKSA1
- RS Stock No.:
- 217-2587
- Mfr. Part No.:
- IPW60R120P7XKSA1
- Manufacturer:
- Infineon
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Subtotal (1 pack of 5 units)*
PHP722.00
(exc. VAT)
PHP808.65
(inc. VAT)
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In Stock
- 1,035 unit(s) ready to ship from another location
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Units | Per Unit | Per Pack* |
|---|---|---|
| 5 - 5 | PHP144.40 | PHP722.00 |
| 10 - 95 | PHP132.378 | PHP661.89 |
| 100 - 245 | PHP122.216 | PHP611.08 |
| 250 - 495 | PHP113.486 | PHP567.43 |
| 500 + | PHP110.336 | PHP551.68 |
*price indicative
- RS Stock No.:
- 217-2587
- Mfr. Part No.:
- IPW60R120P7XKSA1
- Manufacturer:
- Infineon
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 29A | |
| Maximum Drain Source Voltage Vds | 600V | |
| Series | CoolMOS P7 | |
| Package Type | TO-247 | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 120mΩ | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 0.9V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Typical Gate Charge Qg @ Vgs | 36nC | |
| Maximum Power Dissipation Pd | 95W | |
| Maximum Operating Temperature | 150°C | |
| Width | 5.21 mm | |
| Height | 41.42mm | |
| Standards/Approvals | No | |
| Length | 6.13mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 29A | ||
Maximum Drain Source Voltage Vds 600V | ||
Series CoolMOS P7 | ||
Package Type TO-247 | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 120mΩ | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 0.9V | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Typical Gate Charge Qg @ Vgs 36nC | ||
Maximum Power Dissipation Pd 95W | ||
Maximum Operating Temperature 150°C | ||
Width 5.21 mm | ||
Height 41.42mm | ||
Standards/Approvals No | ||
Length 6.13mm | ||
Automotive Standard No | ||
The Infineon 600V CoolMOS™ P7 superjunction (SJ) MOSFET is the successor to the 600V CoolMOS™ P6 series. It continues to balance the need for high efficiency against the ease-of-use in the design process. The best-in-class R onxA and the inherently low gate charge (Q G) of the CoolMOS™ 7th generation platform ensure its high efficiency.
ESD ruggedness of ≥ 2kV (HBM class 2)
Integrated gate resistor R G
Rugged body diode
Wide portfolio in through hole and surface mount packages
Both standard grade and industrial grade parts are available
Related links
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- Infineon CoolMOS P7 Type N-Channel MOSFET 650 V Enhancement, 3-Pin TO-247
- Infineon CoolMOS P7 Type N-Channel MOSFET 650 V Enhancement, 3-Pin TO-247
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