Infineon CoolMOS P7 Type N-Channel MOSFET, 29 A, 600 V Enhancement, 3-Pin TO-247

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Bulk discount available

Subtotal (1 tube of 30 units)*

PHP3,716.40

(exc. VAT)

PHP4,162.50

(inc. VAT)

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  • 1,020 unit(s) ready to ship from another location
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Units
Per Unit
Per Tube*
30 - 60PHP123.88PHP3,716.40
90 - 120PHP119.136PHP3,574.08
150 +PHP117.602PHP3,528.06

*price indicative

RS Stock No.:
217-2586
Mfr. Part No.:
IPW60R120P7XKSA1
Manufacturer:
Infineon
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Brand

Infineon

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

29A

Maximum Drain Source Voltage Vds

600V

Series

CoolMOS P7

Package Type

TO-247

Mount Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance Rds

120mΩ

Channel Mode

Enhancement

Maximum Gate Source Voltage Vgs

20 V

Maximum Power Dissipation Pd

95W

Forward Voltage Vf

0.9V

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

36nC

Maximum Operating Temperature

150°C

Width

5.21 mm

Height

41.42mm

Length

6.13mm

Standards/Approvals

No

Automotive Standard

No

The Infineon 600V CoolMOS™ P7 superjunction (SJ) MOSFET is the successor to the 600V CoolMOS™ P6 series. It continues to balance the need for high efficiency against the ease-of-use in the design process. The best-in-class R onxA and the inherently low gate charge (Q G) of the CoolMOS™ 7th generation platform ensure its high efficiency.

ESD ruggedness of ≥ 2kV (HBM class 2)

Integrated gate resistor R G

Rugged body diode

Wide portfolio in through hole and surface mount packages

Both standard grade and industrial grade parts are available

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