Infineon CoolMOS P7 Type N-Channel MOSFET, 206 A, 650 V Enhancement, 3-Pin TO-247 IPW60R045P7XKSA1

This image is representative of the product range

Bulk discount available

Subtotal (1 unit)*

PHP405.46

(exc. VAT)

PHP454.12

(inc. VAT)

Add to Basket
Select or type quantity
In Stock
  • 357 unit(s) ready to ship from another location
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units
Per Unit
1 - 9PHP405.46
10 - 99PHP372.10
100 - 249PHP342.77
250 - 499PHP318.51
500 +PHP309.39

*price indicative

Packaging Options:
RS Stock No.:
219-6023
Mfr. Part No.:
IPW60R045P7XKSA1
Manufacturer:
Infineon
Find similar products by selecting one or more attributes.
Select all

Brand

Infineon

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

206A

Maximum Drain Source Voltage Vds

650V

Series

CoolMOS P7

Package Type

TO-247

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

45mΩ

Channel Mode

Enhancement

Typical Gate Charge Qg @ Vgs

90nC

Forward Voltage Vf

0.9V

Minimum Operating Temperature

-55°C

Maximum Gate Source Voltage Vgs

20 V

Maximum Power Dissipation Pd

201W

Maximum Operating Temperature

150°C

Height

5.21mm

Width

21.1 mm

Standards/Approvals

No

Length

16.13mm

Automotive Standard

No

The Infineon 600V CoolMOS™ P7 superjunction MOSFET is the successor to the 600V CoolMOS™ P6 series. It continues to balance the need for high efficiency against the ease-of-use in the design process. The best-in-class RonxA and the inherently low gate charge (QG) of the CoolMOS™ 7th generation platform ensure its high efficiency.

ESD ruggedness of ≥ 2kV (HBM class 2)

Integrated gate resistor RG

Rugged body diode

Wide portfolio in through hole and surface mount packages

Both standard grade and industrial grade parts are available

Related links