Infineon CoolMOS P7 Type N-Channel MOSFET, 206 A, 650 V Enhancement, 3-Pin TO-247
- RS Stock No.:
- 219-6022
- Mfr. Part No.:
- IPW60R045P7XKSA1
- Manufacturer:
- Infineon
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Subtotal (1 tube of 30 units)*
PHP7,757.64
(exc. VAT)
PHP8,688.57
(inc. VAT)
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In Stock
- Plus 300 unit(s) shipping from January 19, 2026
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Units | Per Unit | Per Tube* |
|---|---|---|
| 30 - 60 | PHP258.588 | PHP7,757.64 |
| 90 - 120 | PHP248.656 | PHP7,459.68 |
| 150 + | PHP245.491 | PHP7,364.73 |
*price indicative
- RS Stock No.:
- 219-6022
- Mfr. Part No.:
- IPW60R045P7XKSA1
- Manufacturer:
- Infineon
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 206A | |
| Maximum Drain Source Voltage Vds | 650V | |
| Series | CoolMOS P7 | |
| Package Type | TO-247 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 45mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 90nC | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Power Dissipation Pd | 201W | |
| Forward Voltage Vf | 0.9V | |
| Maximum Operating Temperature | 150°C | |
| Height | 5.21mm | |
| Width | 21.1 mm | |
| Length | 16.13mm | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 206A | ||
Maximum Drain Source Voltage Vds 650V | ||
Series CoolMOS P7 | ||
Package Type TO-247 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 45mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 90nC | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Power Dissipation Pd 201W | ||
Forward Voltage Vf 0.9V | ||
Maximum Operating Temperature 150°C | ||
Height 5.21mm | ||
Width 21.1 mm | ||
Length 16.13mm | ||
Standards/Approvals No | ||
Automotive Standard No | ||
The Infineon 600V CoolMOS™ P7 superjunction MOSFET is the successor to the 600V CoolMOS™ P6 series. It continues to balance the need for high efficiency against the ease-of-use in the design process. The best-in-class RonxA and the inherently low gate charge (QG) of the CoolMOS™ 7th generation platform ensure its high efficiency.
ESD ruggedness of ≥ 2kV (HBM class 2)
Integrated gate resistor RG
Rugged body diode
Wide portfolio in through hole and surface mount packages
Both standard grade and industrial grade parts are available
Related links
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- Infineon CoolMOS P7 Type N-Channel MOSFET 650 V Enhancement, 3-Pin TO-247 IPA60R360P7XKSA1
- Infineon CoolMOS P7 Type N-Channel MOSFET 600 V Enhancement, 4-Pin TO-247
