Infineon HEXFET Type P-Channel MOSFET, 14 A, 100 V Enhancement, 3-Pin TO-263
- RS Stock No.:
- 215-2592
- Mfr. Part No.:
- IRF9530NSTRLPBF
- Manufacturer:
- Infineon
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View bulk pricing optionsSubtotal (1 reel of 800 units)*
PHP33,212.00
(exc. VAT)
PHP37,197.60
(inc. VAT)
FREE delivery for orders over ₱5,000.00
In Stock
- Plus 3,200 unit(s) shipping from August 31, 2026
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Units | Per Unit | Per Reel* |
|---|---|---|
| 800 - 800 | PHP41.515 | PHP33,212.00 |
| 1600 - 1600 | PHP39.918 | PHP31,934.40 |
| 2400 + | PHP39.412 | PHP31,529.60 |
*price indicative
- RS Stock No.:
- 215-2592
- Mfr. Part No.:
- IRF9530NSTRLPBF
- Manufacturer:
- Infineon
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type P | |
| Maximum Continuous Drain Current Id | 14A | |
| Maximum Drain Source Voltage Vds | 100V | |
| Package Type | TO-263 | |
| Series | HEXFET | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 200mΩ | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 79W | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 58nC | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Forward Voltage Vf | -1.6V | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Product Type MOSFET | ||
Channel Type Type P | ||
Maximum Continuous Drain Current Id 14A | ||
Maximum Drain Source Voltage Vds 100V | ||
Package Type TO-263 | ||
Series HEXFET | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 200mΩ | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 79W | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 58nC | ||
Maximum Gate Source Voltage Vgs 20V | ||
Forward Voltage Vf -1.6V | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals No | ||
Automotive Standard No | ||
The Infineon series fifth generation HEXFET from International rectifier utilize advanced processing techniques to achieve extremely low on resistance for Silicon area. This benefits, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFET are well known for, providing sufficient level device for, provides designer with an extremely efficient and reliable device for use in a wide variety of applications. The D2pack is a surface mount power package capable of accommodating die sizes upto HEX-4. It provide the highest power capability and the lowest possible on-resistance in any existing surface mount package. The D2pack is suitable for high current applications because of its low internal connection resistance and can dissipate up to 2.0 W in a typical surface mount application.
Advanced Process Technology
Fully avalanche rated
Fast switching
Related links
- Infineon HEXFET Type P-Channel MOSFET 100 V Enhancement, 3-Pin TO-263 IRF9530NSTRLPBF
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- Infineon HEXFET Type P-Channel MOSFET 100 V Enhancement, 3-Pin TO-220 IRF9530NPBF
- Infineon HEXFET Type P-Channel MOSFET 100 V Enhancement, 3-Pin TO-263
- Infineon HEXFET Type P-Channel MOSFET 100 V Enhancement, 3-Pin TO-263
- Infineon HEXFET Type P-Channel MOSFET 55 V Enhancement, 3-Pin TO-263
- Infineon HEXFET Type P-Channel MOSFET 55 V Enhancement, 3-Pin TO-263
- Infineon HEXFET Type P-Channel MOSFET 55 V Enhancement, 3-Pin TO-263