Infineon HEXFET Type P-Channel MOSFET, 38 A, 100 V Enhancement, 3-Pin TO-263 AUIRF5210STRL

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Subtotal (1 pack of 5 units)*

PHP1,928.64

(exc. VAT)

PHP2,160.075

(inc. VAT)

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Last RS stock
  • Final 100 unit(s), ready to ship from another location
Units
Per Unit
Per Pack*
5 - 5PHP385.728PHP1,928.64
10 - 95PHP353.274PHP1,766.37
100 - 245PHP326.166PHP1,630.83
250 - 495PHP302.752PHP1,513.76
500 +PHP294.532PHP1,472.66

*price indicative

Packaging Options:
RS Stock No.:
218-2972
Mfr. Part No.:
AUIRF5210STRL
Manufacturer:
Infineon
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Brand

Infineon

Product Type

MOSFET

Channel Type

Type P

Maximum Continuous Drain Current Id

38A

Maximum Drain Source Voltage Vds

100V

Package Type

TO-263

Series

HEXFET

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

60mΩ

Channel Mode

Enhancement

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

150nC

Maximum Gate Source Voltage Vgs

20 V

Maximum Power Dissipation Pd

3.1W

Forward Voltage Vf

-1.6V

Maximum Operating Temperature

150°C

Length

10.67mm

Width

9.65 mm

Standards/Approvals

No

Height

4.83mm

Automotive Standard

AEC-Q101

The Infineon P-channel automotive MOSFET. It is specifically designed for automotive applications. This cellular design of HEXFET® Power MOSFETs utilizes the latest processing techniques to achieve low on-resistance per silicon area.

Advanced Process Technology

P-Channel MOSFET

Ultra Low On-Resistance

Dynamic dv/dt Rating

Fast Switching

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