Infineon HEXFET Type P-Channel MOSFET, 38 A, 100 V Enhancement, 3-Pin I2PAK
- RS Stock No.:
- 650-3707
- Mfr. Part No.:
- IRF5210LPBF
- Manufacturer:
- Infineon
This image is representative of the product range
Bulk discount available
Subtotal (1 pack of 5 units)*
PHP884.33
(exc. VAT)
PHP990.45
(inc. VAT)
FREE delivery for orders over ₱3,000.00
Temporarily out of stock
- 5 unit(s) shipping from January 02, 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per Unit | Per Pack* |
|---|---|---|
| 5 - 20 | PHP176.866 | PHP884.33 |
| 25 - 45 | PHP171.56 | PHP857.80 |
| 50 - 245 | PHP166.414 | PHP832.07 |
| 250 - 495 | PHP161.42 | PHP807.10 |
| 500 + | PHP156.578 | PHP782.89 |
*price indicative
- RS Stock No.:
- 650-3707
- Mfr. Part No.:
- IRF5210LPBF
- Manufacturer:
- Infineon
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | Type P | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 38A | |
| Maximum Drain Source Voltage Vds | 100V | |
| Package Type | I2PAK (TO-262) | |
| Series | HEXFET | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 60mΩ | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 170W | |
| Typical Gate Charge Qg @ Vgs | 150nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | ±20 V | |
| Forward Voltage Vf | 1.6V | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | Lead-Free | |
| Length | 10.54mm | |
| Height | 10.54mm | |
| Width | 4.69 mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type Type P | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 38A | ||
Maximum Drain Source Voltage Vds 100V | ||
Package Type I2PAK (TO-262) | ||
Series HEXFET | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 60mΩ | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 170W | ||
Typical Gate Charge Qg @ Vgs 150nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs ±20 V | ||
Forward Voltage Vf 1.6V | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals Lead-Free | ||
Length 10.54mm | ||
Height 10.54mm | ||
Width 4.69 mm | ||
Automotive Standard No | ||
P-Channel Power MOSFET 100V to 150V, Infineon
Infineon's range of discrete HEXFET® power MOSFETs includes P-channel devices in surface mount and leaded packages and form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
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