Infineon 600V CoolMOS CFD7 Type N-Channel MOSFET, 13 A, 600 V Enhancement, 5-Pin ThinPAK IPL60R285P7AUMA1
- RS Stock No.:
- 215-2524
- Mfr. Part No.:
- IPL60R285P7AUMA1
- Manufacturer:
- Infineon
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Subtotal (1 pack of 10 units)*
PHP676.40
(exc. VAT)
PHP757.60
(inc. VAT)
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In Stock
- 2,870 unit(s) ready to ship from another location
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Units | Per Unit | Per Pack* |
|---|---|---|
| 10 - 10 | PHP67.64 | PHP676.40 |
| 20 - 90 | PHP65.611 | PHP656.11 |
| 100 - 240 | PHP63.643 | PHP636.43 |
| 250 - 490 | PHP61.734 | PHP617.34 |
| 500 + | PHP59.882 | PHP598.82 |
*price indicative
- RS Stock No.:
- 215-2524
- Mfr. Part No.:
- IPL60R285P7AUMA1
- Manufacturer:
- Infineon
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 13A | |
| Maximum Drain Source Voltage Vds | 600V | |
| Package Type | ThinPAK | |
| Series | 600V CoolMOS CFD7 | |
| Mount Type | Surface | |
| Pin Count | 5 | |
| Maximum Drain Source Resistance Rds | 285mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Typical Gate Charge Qg @ Vgs | 18nC | |
| Maximum Power Dissipation Pd | 59W | |
| Forward Voltage Vf | 0.9V | |
| Maximum Operating Temperature | 150°C | |
| Width | 1.1 mm | |
| Standards/Approvals | No | |
| Length | 8.1mm | |
| Height | 8.1mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 13A | ||
Maximum Drain Source Voltage Vds 600V | ||
Package Type ThinPAK | ||
Series 600V CoolMOS CFD7 | ||
Mount Type Surface | ||
Pin Count 5 | ||
Maximum Drain Source Resistance Rds 285mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Typical Gate Charge Qg @ Vgs 18nC | ||
Maximum Power Dissipation Pd 59W | ||
Forward Voltage Vf 0.9V | ||
Maximum Operating Temperature 150°C | ||
Width 1.1 mm | ||
Standards/Approvals No | ||
Length 8.1mm | ||
Height 8.1mm | ||
Automotive Standard No | ||
The Infineon 600V Cool MOS™ P7 is the successor to the 600V Cool MOS™ P6 series. It continues to balance the need for high efficiency against the ease-of-use in the design process. The best-in-class R onxA and the inherently low gate charge (Q G) of the Cool MOS™ 7th generation platform ensure its high efficiency. It combines the benefits of a fast switching SJ MOSFET with excellent ease of use, e.g. very low ringing tendency, outstanding robustness of body diode against hard commutation and excellent ESD capability. Furthermore, extremely low switching and conduction losses make switching application seven more efficient, more compact and much cooler.
Suitable for hard and soft switching (PFC and LLC) due to an outstanding commutation ruggedness
Excellent ESD robustness >2kV(HBM) for all products
Significant reduction of switching and conduction losses
Wide portfolio in through hole and surface mount packages
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