Infineon 600V CoolMOS P7 Type N-Channel MOSFET, 10 A, 600 V Enhancement, 5-Pin ThinPAK IPL60R365P7AUMA1

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Subtotal (1 pack of 10 units)*

PHP903.60

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PHP1,012.00

(inc. VAT)

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Units
Per Unit
Per Pack*
10 - 10PHP90.36PHP903.60
20 - 90PHP82.847PHP828.47
100 - 240PHP76.459PHP764.59
250 - 490PHP71.012PHP710.12
500 +PHP69.04PHP690.40

*price indicative

Packaging Options:
RS Stock No.:
214-4400
Mfr. Part No.:
IPL60R365P7AUMA1
Manufacturer:
Infineon
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Brand

Infineon

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

10A

Maximum Drain Source Voltage Vds

600V

Package Type

ThinPAK

Series

600V CoolMOS P7

Mount Type

Surface

Pin Count

5

Maximum Drain Source Resistance Rds

365mΩ

Channel Mode

Enhancement

Minimum Operating Temperature

-40°C

Maximum Power Dissipation Pd

46W

Maximum Gate Source Voltage Vgs

20 V

Typical Gate Charge Qg @ Vgs

13nC

Forward Voltage Vf

0.9V

Maximum Operating Temperature

150°C

Length

8.1mm

Width

8.1 mm

Height

1.1mm

Standards/Approvals

No

Automotive Standard

No

This Infineon 600V Cool MOS P7 super junction MOSFET continues to balance the need for high efficiency against the ease-of-use in the design process. The best-in-class RonxA and the inherently low gate charge (QG) of the Cool MOS™ 7th generation platform ensure its high efficiency.

It has rugged body diode

Integrated RG reduces MOSFET oscillation sensitivity

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