Infineon 600V CoolMOS CFD7 Type N-Channel MOSFET, 14 A, 650 V Enhancement, 5-Pin ThinPAK

This image is representative of the product range

Bulk discount available

Subtotal (1 reel of 3000 units)*

PHP249,090.00

(exc. VAT)

PHP278,970.00

(inc. VAT)

Add to Basket
Select or type quantity
In Stock
  • Plus 3,000 unit(s) shipping from December 29, 2025
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units
Per Unit
Per Reel*
3000 - 3000PHP83.03PHP249,090.00
6000 - 6000PHP80.539PHP241,617.00
9000 +PHP78.123PHP234,369.00

*price indicative

RS Stock No.:
215-2521
Mfr. Part No.:
IPL60R185CFD7AUMA1
Manufacturer:
Infineon
Find similar products by selecting one or more attributes.
Select all

Brand

Infineon

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

14A

Maximum Drain Source Voltage Vds

650V

Series

600V CoolMOS CFD7

Package Type

ThinPAK

Mount Type

Surface

Pin Count

5

Maximum Drain Source Resistance Rds

185mΩ

Channel Mode

Enhancement

Maximum Power Dissipation Pd

85W

Maximum Gate Source Voltage Vgs

20 V

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

28nC

Forward Voltage Vf

1V

Maximum Operating Temperature

150°C

Height

8.1mm

Standards/Approvals

No

Width

1.1 mm

Length

8.1mm

Automotive Standard

No

The Infineon 600V Cool MOS™ CFD7 is latest high voltage super junction MOSFET technology with integrated fast body diode, completing the Cool MOS™ 7 series. Cool MOS™ CFD7 comes with reduced gate charge (Qg), improved turn-off behaviour and a reverse recovery charge (Qrr) of up to 69% lower compared to the competition, as well as the lowest reverse recovery time (trr) in the market.

Ultra-fast body diode

Best-in-class reverse recovery charge (Qrr)

Improved reverse diode dv/dt and dif/dt ruggedness

Lowest FOM RDS(on) x Qg and Eoss

Best-in-class RDS(on)/package combinations

Related links