Infineon CoolMOS CFD7 Type N-Channel MOSFET, 16 A, 600 V Enhancement, 5-Pin VSON IPL60R160CFD7AUMA1
- RS Stock No.:
- 214-9072
- Mfr. Part No.:
- IPL60R160CFD7AUMA1
- Manufacturer:
- Infineon
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Subtotal (1 pack of 5 units)*
PHP674.24
(exc. VAT)
PHP755.15
(inc. VAT)
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In Stock
- 2,970 unit(s) ready to ship from another location
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Units | Per Unit | Per Pack* |
|---|---|---|
| 5 - 5 | PHP134.848 | PHP674.24 |
| 10 - 95 | PHP123.628 | PHP618.14 |
| 100 - 245 | PHP114.008 | PHP570.04 |
| 250 - 495 | PHP105.99 | PHP529.95 |
| 500 + | PHP102.962 | PHP514.81 |
*price indicative
- RS Stock No.:
- 214-9072
- Mfr. Part No.:
- IPL60R160CFD7AUMA1
- Manufacturer:
- Infineon
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 16A | |
| Maximum Drain Source Voltage Vds | 600V | |
| Package Type | VSON | |
| Series | CoolMOS CFD7 | |
| Mount Type | Surface | |
| Pin Count | 5 | |
| Maximum Drain Source Resistance Rds | 160mΩ | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 1V | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Power Dissipation Pd | 95W | |
| Minimum Operating Temperature | -40°C | |
| Typical Gate Charge Qg @ Vgs | 31nC | |
| Maximum Operating Temperature | 150°C | |
| Length | 8.1mm | |
| Height | 1.1mm | |
| Width | 8.1 mm | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 16A | ||
Maximum Drain Source Voltage Vds 600V | ||
Package Type VSON | ||
Series CoolMOS CFD7 | ||
Mount Type Surface | ||
Pin Count 5 | ||
Maximum Drain Source Resistance Rds 160mΩ | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 1V | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Power Dissipation Pd 95W | ||
Minimum Operating Temperature -40°C | ||
Typical Gate Charge Qg @ Vgs 31nC | ||
Maximum Operating Temperature 150°C | ||
Length 8.1mm | ||
Height 1.1mm | ||
Width 8.1 mm | ||
Standards/Approvals No | ||
Automotive Standard No | ||
The Infineon CoolMOS is a revolutionary technology for high voltage power MOSFETs, designed according to the super junction (SJ) principle and pioneered by Infineon Technologies. The latest CoolMOS CFD7 is the successor to the CoolMOS CFD2 series and is an optimized platform tailored to target soft switching applications such as phase-shift full-bridge (ZVS) and LLC. The CoolMOS CFD7 technology meets highest efficiency and reliability standards and furthermore supports high power density solutions. Altogether, CoolMOS CFD7 makes resonant switching topologies more efficient, more reliable, lighter and cooler.
Ultra-fast body diode
Low gate charge
Related links
- Infineon CoolMOS CFD7 Type N-Channel MOSFET 600 V Enhancement, 5-Pin VSON
- Infineon 600V CoolMOS CFD7 Type N-Channel MOSFET 650 V Enhancement, 5-Pin ThinPAK
- Infineon CoolMOS CFD7 Type N-Channel MOSFET 600 V Enhancement, 3-Pin TO-220
- Infineon CoolMOS CFD7 Type N-Channel MOSFET 600 V Enhancement, 3-Pin TO-220
- Infineon CoolMOS CFD7 Type N-Channel MOSFET 600 V Enhancement, 3-Pin TO-247
- Infineon CoolMOS CFD7 Type N-Channel MOSFET 600 V Enhancement, 3-Pin TO-220
- Infineon CoolMOS CFD7 Type N-Channel MOSFET 600 V Enhancement, 3-Pin TO-247
- Infineon CoolMOS CFD7 Type N-Channel MOSFET 600 V Enhancement, 3-Pin TO-247