Infineon CoolMOS CFD7 Type N-Channel MOSFET, 16 A, 600 V Enhancement, 5-Pin VSON

This image is representative of the product range

Bulk discount available

Subtotal (1 reel of 3000 units)*

PHP271,623.00

(exc. VAT)

PHP304,218.00

(inc. VAT)

Add to Basket
Select or type quantity
Temporarily out of stock
  • Shipping from May 25, 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units
Per Unit
Per Reel*
3000 - 3000PHP90.541PHP271,623.00
6000 - 6000PHP87.824PHP263,472.00
9000 +PHP85.19PHP255,570.00

*price indicative

RS Stock No.:
214-9071
Mfr. Part No.:
IPL60R160CFD7AUMA1
Manufacturer:
Infineon
Find similar products by selecting one or more attributes.
Select all

Brand

Infineon

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

16A

Maximum Drain Source Voltage Vds

600V

Package Type

VSON

Series

CoolMOS CFD7

Mount Type

Surface

Pin Count

5

Maximum Drain Source Resistance Rds

160mΩ

Channel Mode

Enhancement

Typical Gate Charge Qg @ Vgs

31nC

Maximum Gate Source Voltage Vgs

20 V

Maximum Power Dissipation Pd

95W

Minimum Operating Temperature

-40°C

Forward Voltage Vf

1V

Maximum Operating Temperature

150°C

Height

1.1mm

Width

8.1 mm

Length

8.1mm

Standards/Approvals

No

Automotive Standard

No

The Infineon CoolMOS is a revolutionary technology for high voltage power MOSFETs, designed according to the super junction (SJ) principle and pioneered by Infineon Technologies. The latest CoolMOS CFD7 is the successor to the CoolMOS CFD2 series and is an optimized platform tailored to target soft switching applications such as phase-shift full-bridge (ZVS) and LLC. The CoolMOS CFD7 technology meets highest efficiency and reliability standards and furthermore supports high power density solutions. Altogether, CoolMOS CFD7 makes resonant switching topologies more efficient, more reliable, lighter and cooler.

Ultra-fast body diode

Low gate charge

Related links