Infineon IPI Type N-Channel MOSFET, 120 A, 80 V Enhancement, 3-Pin TO-262 IPI120N08S403AKSA1
- RS Stock No.:
- 214-9064
- Mfr. Part No.:
- IPI120N08S403AKSA1
- Manufacturer:
- Infineon
This image is representative of the product range
Bulk discount available
Subtotal (1 pack of 5 units)*
PHP2,541.56
(exc. VAT)
PHP2,846.545
(inc. VAT)
FREE delivery for orders over ₱3,000.00
In Stock
- 500 unit(s) ready to ship from another location
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per Unit | Per Pack* |
|---|---|---|
| 5 - 5 | PHP508.312 | PHP2,541.56 |
| 10 - 95 | PHP466.108 | PHP2,330.54 |
| 100 - 245 | PHP429.934 | PHP2,149.67 |
| 250 - 495 | PHP399.326 | PHP1,996.63 |
| 500 + | PHP388.19 | PHP1,940.95 |
*price indicative
- RS Stock No.:
- 214-9064
- Mfr. Part No.:
- IPI120N08S403AKSA1
- Manufacturer:
- Infineon
Specifications
Legislation and Compliance
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 120A | |
| Maximum Drain Source Voltage Vds | 80V | |
| Package Type | TO-262 | |
| Series | IPI | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 2.5mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Typical Gate Charge Qg @ Vgs | 128nC | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 1.3V | |
| Maximum Power Dissipation Pd | 278W | |
| Maximum Operating Temperature | 175°C | |
| Height | 23.45mm | |
| Standards/Approvals | No | |
| Width | 4.4 mm | |
| Length | 10.2mm | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 120A | ||
Maximum Drain Source Voltage Vds 80V | ||
Package Type TO-262 | ||
Series IPI | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 2.5mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Typical Gate Charge Qg @ Vgs 128nC | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 1.3V | ||
Maximum Power Dissipation Pd 278W | ||
Maximum Operating Temperature 175°C | ||
Height 23.45mm | ||
Standards/Approvals No | ||
Width 4.4 mm | ||
Length 10.2mm | ||
Automotive Standard AEC-Q101 | ||
Related links
- Infineon IPI Type N-Channel MOSFET 80 V Enhancement, 3-Pin TO-262
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- Infineon OptiMOS-T2 Type N-Channel MOSFET 80 V Enhancement, 3-Pin TO-263
- Infineon OptiMOS-T2 Type N-Channel MOSFET 80 V Enhancement, 3-Pin TO-220
- Infineon OptiMOS -T2 Type N-Channel MOSFET 80 V Enhancement, 3-Pin TO-263
