Infineon OptiMOS-T2 Type N-Channel MOSFET, 120 A, 80 V Enhancement, 3-Pin TO-263 IPB120N08S404ATMA1

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Subtotal (1 pack of 5 units)*

PHP1,060.36

(exc. VAT)

PHP1,187.605

(inc. VAT)

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  • 880 unit(s) ready to ship from another location
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Units
Per Unit
Per Pack*
5 - 5PHP212.072PHP1,060.36
10 - 95PHP205.71PHP1,028.55
100 - 245PHP199.538PHP997.69
250 - 495PHP193.556PHP967.78
500 +PHP187.746PHP938.73

*price indicative

Packaging Options:
RS Stock No.:
214-9014
Mfr. Part No.:
IPB120N08S404ATMA1
Manufacturer:
Infineon
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Brand

Infineon

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

120A

Maximum Drain Source Voltage Vds

80V

Package Type

TO-263

Series

OptiMOS-T2

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

4.1mΩ

Channel Mode

Enhancement

Standards/Approvals

No

Automotive Standard

AEC-Q101

The Infineon range of OptiMOS -T2 product family extends the existing families of OptiMOS -T and OptiMOS. These OptiMOS products are available in high performance packages to tackle the most challenging applications giving full flexibility in limited spaces. The Infineon products are designed to meet and exceed the energy efficiency and power density requirements of the sharpened next generation voltage regulation standards in computing applications. These are robust packages with superior quality and reliability.

The product is AEC Q101 qualified

100% Avalanche tested

It has 175°C operating temperature

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