Infineon OptiMOS-T2 Type N-Channel MOSFET, 120 A, 60 V Enhancement, 3-Pin TO-263 IPB120N06S4H1ATMA2

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Subtotal (1 pack of 5 units)*

PHP1,344.44

(exc. VAT)

PHP1,505.775

(inc. VAT)

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Units
Per Unit
Per Pack*
5 - 5PHP268.888PHP1,344.44
10 - 95PHP260.818PHP1,304.09
100 - 245PHP252.996PHP1,264.98
250 - 495PHP245.404PHP1,227.02
500 +PHP238.042PHP1,190.21

*price indicative

Packaging Options:
RS Stock No.:
218-3033
Mfr. Part No.:
IPB120N06S4H1ATMA2
Manufacturer:
Infineon
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Brand

Infineon

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

120A

Maximum Drain Source Voltage Vds

60V

Series

OptiMOS-T2

Package Type

TO-263

Mount Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance Rds

2mΩ

Channel Mode

Enhancement

Standards/Approvals

No

Automotive Standard

AEC-Q101

The Infineon OptiMOS™-T2 series N-channel power MOSFET. It has low switching and conduction power losses for high thermal efficiency.

N-channel - Enhancement mode

175°C operating temperature

100% Avalanche tested

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