Infineon OptiMOS-T2 Type N-Channel MOSFET, 120 A, 60 V Enhancement, 3-Pin TO-263 IPB120N06S4H1ATMA2

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Subtotal (1 pack of 5 units)*

PHP777.10

(exc. VAT)

PHP870.35

(inc. VAT)

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  • 950 unit(s) ready to ship from another location
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Units
Per Unit
Per Pack*
5 - 5PHP155.42PHP777.10
10 - 95PHP150.756PHP753.78
100 - 245PHP146.234PHP731.17
250 - 495PHP141.846PHP709.23
500 +PHP137.59PHP687.95

*price indicative

Packaging Options:
RS Stock No.:
218-3033
Mfr. Part No.:
IPB120N06S4H1ATMA2
Manufacturer:
Infineon
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Brand

Infineon

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

120A

Maximum Drain Source Voltage Vds

60V

Series

OptiMOS-T2

Package Type

TO-263

Mount Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance Rds

2mΩ

Channel Mode

Enhancement

Standards/Approvals

No

Automotive Standard

AEC-Q101

The Infineon OptiMOS™-T2 series N-channel power MOSFET. It has low switching and conduction power losses for high thermal efficiency.

N-channel - Enhancement mode

175°C operating temperature

100% Avalanche tested

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