Infineon OptiMOS -T2 Type N-Channel MOSFET, 120 A, 80 V Enhancement, 3-Pin TO-263 IPB120N08S403ATMA1

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Subtotal (1 pack of 5 units)*

PHP1,688.15

(exc. VAT)

PHP1,890.75

(inc. VAT)

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Last RS stock
  • Final 220 unit(s), ready to ship from another location
Units
Per Unit
Per Pack*
5 - 5PHP337.63PHP1,688.15
10 - 95PHP309.618PHP1,548.09
100 - 245PHP285.772PHP1,428.86
250 - 495PHP265.338PHP1,326.69
500 +PHP257.77PHP1,288.85

*price indicative

Packaging Options:
RS Stock No.:
214-4366
Mfr. Part No.:
IPB120N08S403ATMA1
Manufacturer:
Infineon
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Brand

Infineon

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

120A

Maximum Drain Source Voltage Vds

80V

Package Type

TO-263

Series

OptiMOS -T2

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

2.5mΩ

Channel Mode

Enhancement

Minimum Operating Temperature

-55°C

Maximum Gate Source Voltage Vgs

20 V

Maximum Power Dissipation Pd

278W

Forward Voltage Vf

1.3V

Typical Gate Charge Qg @ Vgs

128nC

Maximum Operating Temperature

175°C

Width

9.27 mm

Length

10.02mm

Standards/Approvals

No

Height

4.5mm

Automotive Standard

AEC-Q101

This Infineon OptiMOS T2 MOSFET is 100% Avalanche tested and is RoHS compliant.

It is AEC Q101 qualified

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