Infineon Dual OptiMOS-T2 2 Type N-Channel Power Transistor, 16 A, 100 V Enhancement, 8-Pin TDSON IPG16N10S461AATMA1
- RS Stock No.:
- 214-9058
- Mfr. Part No.:
- IPG16N10S461AATMA1
- Manufacturer:
- Infineon
This image is representative of the product range
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View bulk pricing optionsSubtotal (1 pack of 20 units)*
PHP1,134.46
(exc. VAT)
PHP1,270.60
(inc. VAT)
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In Stock
- Plus 8,660 unit(s) shipping from June 08, 2026
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Units | Per Unit | Per Pack* |
|---|---|---|
| 20 - 20 | PHP56.723 | PHP1,134.46 |
| 40 - 80 | PHP51.944 | PHP1,038.88 |
| 100 - 220 | PHP48.014 | PHP960.28 |
| 240 - 480 | PHP44.547 | PHP890.94 |
| 500 + | PHP43.314 | PHP866.28 |
*price indicative
- RS Stock No.:
- 214-9058
- Mfr. Part No.:
- IPG16N10S461AATMA1
- Manufacturer:
- Infineon
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Product Type | Power Transistor | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 16A | |
| Maximum Drain Source Voltage Vds | 100V | |
| Package Type | TDSON | |
| Series | OptiMOS-T2 | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 61mΩ | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 29W | |
| Typical Gate Charge Qg @ Vgs | 5.4nC | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 1V | |
| Transistor Configuration | Dual | |
| Maximum Operating Temperature | 175°C | |
| Length | 5.15mm | |
| Height | 1mm | |
| Standards/Approvals | RoHS | |
| Number of Elements per Chip | 2 | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Product Type Power Transistor | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 16A | ||
Maximum Drain Source Voltage Vds 100V | ||
Package Type TDSON | ||
Series OptiMOS-T2 | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 61mΩ | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 29W | ||
Typical Gate Charge Qg @ Vgs 5.4nC | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 1V | ||
Transistor Configuration Dual | ||
Maximum Operating Temperature 175°C | ||
Length 5.15mm | ||
Height 1mm | ||
Standards/Approvals RoHS | ||
Number of Elements per Chip 2 | ||
Automotive Standard AEC-Q101 | ||
The Infineon range of new OptiMOS -T2 has a range of energy efficient MOSFET transistors with CO2 reduction and electric drives. The new OptiMOS -T2 product family extends the existing families of OptiMOS -T and OptiMOS. The Dual N-channel Normal Level - Enhancement mode, are feasible for automatic optical inspection (AOI). OptiMOS products are available in high performance packages to tackle the most challenging applications giving full flexibility in limited spaces. These Infineon products are designed to meet and exceed the energy efficiency and power density requirements.
The product is AEC Q101 qualified
100% Avalanche tested
It has 175°C operating temperature
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