Infineon Dual OptiMOS 2 Type N-Channel Power Transistor, 20 A, 40 V Enhancement, 8-Pin TDSON IPG20N04S4L07AATMA1
- RS Stock No.:
- 220-7422
- Mfr. Part No.:
- IPG20N04S4L07AATMA1
- Manufacturer:
- Infineon
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Subtotal (1 pack of 10 units)*
PHP807.13
(exc. VAT)
PHP903.99
(inc. VAT)
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In Stock
- 4,960 unit(s) ready to ship from another location
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Units | Per Unit | Per Pack* |
|---|---|---|
| 10 - 10 | PHP80.713 | PHP807.13 |
| 20 - 90 | PHP74.043 | PHP740.43 |
| 100 - 240 | PHP68.339 | PHP683.39 |
| 250 - 490 | PHP63.41 | PHP634.10 |
| 500 + | PHP61.67 | PHP616.70 |
*price indicative
- RS Stock No.:
- 220-7422
- Mfr. Part No.:
- IPG20N04S4L07AATMA1
- Manufacturer:
- Infineon
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | Type N | |
| Product Type | Power Transistor | |
| Maximum Continuous Drain Current Id | 20A | |
| Maximum Drain Source Voltage Vds | 40V | |
| Series | OptiMOS | |
| Package Type | TDSON | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 7.2mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 39nC | |
| Maximum Gate Source Voltage Vgs | 16 V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 65W | |
| Forward Voltage Vf | 0.9V | |
| Transistor Configuration | Dual | |
| Maximum Operating Temperature | 175°C | |
| Height | 1mm | |
| Width | 5.9 mm | |
| Length | 5.15mm | |
| Standards/Approvals | RoHS | |
| Number of Elements per Chip | 2 | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type Type N | ||
Product Type Power Transistor | ||
Maximum Continuous Drain Current Id 20A | ||
Maximum Drain Source Voltage Vds 40V | ||
Series OptiMOS | ||
Package Type TDSON | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 7.2mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 39nC | ||
Maximum Gate Source Voltage Vgs 16 V | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 65W | ||
Forward Voltage Vf 0.9V | ||
Transistor Configuration Dual | ||
Maximum Operating Temperature 175°C | ||
Height 1mm | ||
Width 5.9 mm | ||
Length 5.15mm | ||
Standards/Approvals RoHS | ||
Number of Elements per Chip 2 | ||
Automotive Standard AEC-Q101 | ||
The Infineon offers a wide range of 20V-40V N-channel automotive qualified power MOSFETs using the new OptiMOS technology in a variety of packages to meet a range of needs and achieving RDS(on) down to 0.6mΩ.The new OptiMOS 6 and Optimos5 40V benchmark MOSFET technology enables low conduction losses (best in Class RDSon performance), low switching losses (improved switching behaviour), improved diode recovery and EMC behaviour. This MOSFET technology is used in the most advanced and innovative packages in order to reach the best product performances and quality. For ultimate design flexibility, automotive-qualified MOSFETs are available in a variety of packages to meet a range of needs. Infineon offer customers a steady stream of improvements in current capability, switching behaviour, reliability, package size and overall quality. The newly developed integrated half-bridge is an innovative and cost efficient package solution for motor drive and body applications.
Dual N-channel Logic Level - Enhancement mode
MSL1 up to 260°C peak reflow
175°C operating temperature
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