onsemi NVH Type N-Channel MOSFET, 102 A, 1200 V Enhancement, 4-Pin TO-247

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Subtotal (1 tube of 450 units)*

PHP1,166,329.80

(exc. VAT)

PHP1,306,289.25

(inc. VAT)

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Units
Per Unit
Per Tube*
450 +PHP2,591.844PHP1,166,329.80

*price indicative

RS Stock No.:
202-5734
Mfr. Part No.:
NVH4L020N120SC1
Manufacturer:
onsemi
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Brand

onsemi

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

102A

Maximum Drain Source Voltage Vds

1200V

Package Type

TO-247

Series

NVH

Mount Type

Through Hole

Pin Count

4

Maximum Drain Source Resistance Rds

28mΩ

Channel Mode

Enhancement

Minimum Operating Temperature

-55°C

Maximum Gate Source Voltage Vgs

25 V

Typical Gate Charge Qg @ Vgs

220nC

Maximum Power Dissipation Pd

510W

Maximum Operating Temperature

175°C

Width

5.2 mm

Length

15.8mm

Standards/Approvals

AEC-Q101 and PPAP Capable

Height

22.74mm

Automotive Standard

No

Silicon Carbide (SiC) MOSFET, N‐Channel - EliteSiC, 20 mohm, 1200 V, M1, TO247−4L Silicon Carbide MOSFET, N-Channel, 1200 V, 20 mΩ, TO247-4L


The ON Semiconductor Silicon Carbide Power MOSFET runs with 102 Ampere and 1200 Volts. It can be used in Automotive on board charger, DC or DC Converter applications.

AEC Q101 qualified

Production part approval process Capable

100% avalanche tested

Low effective output capacitance

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