onsemi NVH Type N-Channel MOSFET, 58 A, 1200 V Enhancement, 4-Pin TO-247

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Subtotal (1 tube of 450 units)*

PHP877,743.00

(exc. VAT)

PHP983,070.00

(inc. VAT)

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Units
Per Unit
Per Tube*
450 +PHP1,950.54PHP877,743.00

*price indicative

RS Stock No.:
202-5737
Mfr. Part No.:
NVH4L040N120SC1
Manufacturer:
onsemi
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Brand

onsemi

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

58A

Maximum Drain Source Voltage Vds

1200V

Package Type

TO-247

Series

NVH

Mount Type

Through Hole

Pin Count

4

Maximum Drain Source Resistance Rds

56mΩ

Channel Mode

Enhancement

Maximum Power Dissipation Pd

319W

Typical Gate Charge Qg @ Vgs

106nC

Maximum Gate Source Voltage Vgs

25 V

Minimum Operating Temperature

-50°C

Maximum Operating Temperature

170°C

Standards/Approvals

No

Length

15.8mm

Height

22.74mm

Width

5.2 mm

Automotive Standard

No

Silicon Carbide (SiC) MOSFET, N‐Channel - EliteSiC, 40 mohm, 1200 V, M1, TO247−4L Silicon Carbide MOSFET, N-Channel, 1200 V, 40 mΩ, TO247-4L


The ON Semiconductor Silicon Carbide Power MOSFET runs with 58 Ampere and 1200 Volts. It can be used in Automotive on board charger, DC or DC Converter applications.

AEC Q101 qualified

Production part approval process Capable

100% avalanche tested

Low effective output capacitance

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