onsemi NVH Type N-Channel MOSFET, 60 A, 1200 V Enhancement, 3-Pin TO-247 NVHL040N120SC1
- RS Stock No.:
- 202-5745
- Mfr. Part No.:
- NVHL040N120SC1
- Manufacturer:
- onsemi
This image is representative of the product range
Bulk discount available
Subtotal (1 pack of 2 units)*
PHP4,590.83
(exc. VAT)
PHP5,141.73
(inc. VAT)
FREE delivery for orders over ₱3,000.00
In Stock
- 658 unit(s) ready to ship from another location
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Units | Per Unit | Per Pack* |
|---|---|---|
| 2 - 48 | PHP2,295.415 | PHP4,590.83 |
| 50 - 98 | PHP2,146.95 | PHP4,293.90 |
| 100 - 198 | PHP1,951.41 | PHP3,902.82 |
| 200 + | PHP1,788.63 | PHP3,577.26 |
*price indicative
- RS Stock No.:
- 202-5745
- Mfr. Part No.:
- NVHL040N120SC1
- Manufacturer:
- onsemi
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | onsemi | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 60A | |
| Maximum Drain Source Voltage Vds | 1200V | |
| Package Type | TO-247 | |
| Series | NVH | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 40mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 106nC | |
| Maximum Gate Source Voltage Vgs | 25 V | |
| Maximum Power Dissipation Pd | 174W | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | No | |
| Width | 4.82 mm | |
| Height | 20.25mm | |
| Length | 15.87mm | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand onsemi | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 60A | ||
Maximum Drain Source Voltage Vds 1200V | ||
Package Type TO-247 | ||
Series NVH | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 40mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 106nC | ||
Maximum Gate Source Voltage Vgs 25 V | ||
Maximum Power Dissipation Pd 174W | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals No | ||
Width 4.82 mm | ||
Height 20.25mm | ||
Length 15.87mm | ||
Automotive Standard AEC-Q101 | ||
Silicon Carbide (SiC) MOSFET, N‐Channel - EliteSiC, 40 mohm, 1200 V, M1, TO247−3L Silicon Carbide MOSFET, N-Channel, 1200 V, 40 mΩ, TO247-3L
The ON Semiconductor Silicon Carbide Power MOSFET runs with 60 Ampere and 1200 Volts. It can be used in Automotive on board charger, DC or DC Converter applications.
AEC Q101 qualified
100% UIL Tested
Low effective output capacitance
RoHS compliant
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