STMicroelectronics ST SiC N-Channel MOSFET Module, 38 A, 600 V Depletion, 3-Pin TO-247 STWA65N60DM6

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We don't know if this item will be back in stock, RS intend to remove it from our range soon.
RS Stock No.:
202-5550
Mfr. Part No.:
STWA65N60DM6
Manufacturer:
STMicroelectronics
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Brand

STMicroelectronics

Channel Type

N

Maximum Continuous Drain Current

38 A

Maximum Drain Source Voltage

600 V

Package Type

TO-247

Series

ST

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

0.06 Ω

Channel Mode

Depletion

Maximum Gate Threshold Voltage

4.75V

Number of Elements per Chip

1

Transistor Material

SiC

The STMicroelectronics N-channel Power MOSFET is part of the MDmesh™ DM6 fast recovery diode series. Compared with the previous MDmesh fast generation, DM6 combines very low recovery charge (Qrr), recovery time (trr) and excellent improvement in RDS(on) per area with one of the most effective switching behaviours available in the market.

100% avalanche tested
Zener-protected

For these non-cancellable (NC), and non-returnable (NR) products, Terms and Conditions apply.


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