onsemi NTMYS010N04CL Type N-Channel MOSFET, 38 A, 40 V Enhancement, 4-Pin LFPAK NTMYS010N04CLTWG
- RS Stock No.:
- 195-2531
- Mfr. Part No.:
- NTMYS010N04CLTWG
- Manufacturer:
- onsemi
This image is representative of the product range
Bulk discount available
Subtotal (1 pack of 30 units)*
PHP3,512.34
(exc. VAT)
PHP3,933.81
(inc. VAT)
FREE delivery for orders over ₱3,000.00
Temporarily out of stock
- Shipping from June 15, 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per Unit | Per Pack* |
|---|---|---|
| 30 - 270 | PHP117.078 | PHP3,512.34 |
| 300 - 720 | PHP106.387 | PHP3,191.61 |
| 750 - 1470 | PHP104.171 | PHP3,125.13 |
| 1500 + | PHP102.834 | PHP3,085.02 |
*price indicative
- RS Stock No.:
- 195-2531
- Mfr. Part No.:
- NTMYS010N04CLTWG
- Manufacturer:
- onsemi
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | onsemi | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 38A | |
| Maximum Drain Source Voltage Vds | 40V | |
| Package Type | LFPAK | |
| Series | NTMYS010N04CL | |
| Mount Type | Surface | |
| Pin Count | 4 | |
| Maximum Drain Source Resistance Rds | 17.6mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Power Dissipation Pd | 28W | |
| Forward Voltage Vf | 1.2V | |
| Typical Gate Charge Qg @ Vgs | 7.3nC | |
| Maximum Operating Temperature | 175°C | |
| Width | 4.25 mm | |
| Standards/Approvals | No | |
| Height | 1.15mm | |
| Length | 5mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand onsemi | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 38A | ||
Maximum Drain Source Voltage Vds 40V | ||
Package Type LFPAK | ||
Series NTMYS010N04CL | ||
Mount Type Surface | ||
Pin Count 4 | ||
Maximum Drain Source Resistance Rds 17.6mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Power Dissipation Pd 28W | ||
Forward Voltage Vf 1.2V | ||
Typical Gate Charge Qg @ Vgs 7.3nC | ||
Maximum Operating Temperature 175°C | ||
Width 4.25 mm | ||
Standards/Approvals No | ||
Height 1.15mm | ||
Length 5mm | ||
Automotive Standard No | ||
Industrial Power MOSFET in a 5x6mm LFPAK package designed for compact and efficient designs and including high thermal performance.
Small Footprint (5x6 mm) for Compact Design
Low RDS(on) to Minimize Conduction Losses
Low QG and Capacitance to Minimize Driver Losses
LFPAK4 Package, Industry Standard
These Devices are Pb−Free
Related links
- onsemi NTMYS010N04CL Type N-Channel MOSFET 40 V Enhancement, 4-Pin LFPAK
- onsemi NVMYS010N04CL Type N-Channel MOSFET 40 V Enhancement, 4-Pin LFPAK
- onsemi NVMYS010N04CL Type N-Channel MOSFET 40 V Enhancement, 4-Pin LFPAK NVMYS010N04CLTWG
- onsemi NVMYS3D3N06CL Type N-Channel MOSFET 60 V Enhancement, 4-Pin LFPAK
- onsemi NTMYS025N06CL Type N-Channel MOSFET 60 V Enhancement, 4-Pin LFPAK
- onsemi NVMYS1D3N04C Type N-Channel MOSFET 40 V Enhancement, 4-Pin LFPAK
- onsemi NVMYS025N06CL Type N-Channel MOSFET 60 V Enhancement, 4-Pin LFPAK
- onsemi NVMYS021N06CL Type N-Channel MOSFET 60 V Enhancement, 4-Pin LFPAK