onsemi NTMYS025N06CL Type N-Channel MOSFET, 21 A, 60 V Enhancement, 4-Pin LFPAK NTMYS025N06CLTWG
- RS Stock No.:
- 195-2539
- Mfr. Part No.:
- NTMYS025N06CLTWG
- Manufacturer:
- onsemi
This image is representative of the product range
Bulk discount available
Subtotal (1 pack of 30 units)*
PHP2,140.32
(exc. VAT)
PHP2,397.15
(inc. VAT)
FREE delivery for orders over ₱3,000.00
In Stock
- Plus 3,000 unit(s) shipping from December 29, 2025
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Units | Per Unit | Per Pack* |
|---|---|---|
| 30 - 270 | PHP71.344 | PHP2,140.32 |
| 300 - 720 | PHP64.842 | PHP1,945.26 |
| 750 - 1470 | PHP63.159 | PHP1,894.77 |
| 1500 + | PHP62.35 | PHP1,870.50 |
*price indicative
- RS Stock No.:
- 195-2539
- Mfr. Part No.:
- NTMYS025N06CLTWG
- Manufacturer:
- onsemi
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | onsemi | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 21A | |
| Maximum Drain Source Voltage Vds | 60V | |
| Package Type | LFPAK | |
| Series | NTMYS025N06CL | |
| Mount Type | Surface | |
| Pin Count | 4 | |
| Maximum Drain Source Resistance Rds | 43mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Power Dissipation Pd | 24W | |
| Forward Voltage Vf | 1.2V | |
| Typical Gate Charge Qg @ Vgs | 5.8nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 175°C | |
| Height | 1.15mm | |
| Width | 4.25 mm | |
| Length | 5mm | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand onsemi | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 21A | ||
Maximum Drain Source Voltage Vds 60V | ||
Package Type LFPAK | ||
Series NTMYS025N06CL | ||
Mount Type Surface | ||
Pin Count 4 | ||
Maximum Drain Source Resistance Rds 43mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Power Dissipation Pd 24W | ||
Forward Voltage Vf 1.2V | ||
Typical Gate Charge Qg @ Vgs 5.8nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 175°C | ||
Height 1.15mm | ||
Width 4.25 mm | ||
Length 5mm | ||
Standards/Approvals No | ||
Automotive Standard No | ||
Industrial Power MOSFET in a 5x6mm LFPAK package designed for compact and efficient designs and including high thermal performance.
Small Footprint (5x6 mm) for Compact Design
Low RDS(on) to Minimize Conduction Losses
Low QG and Capacitance to Minimize Driver Losses
LFPAK4 Package, Industry Standard
These Devices are Pb−Free
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