onsemi NVMYS1D3N04C Type N-Channel MOSFET, 252 A, 40 V Enhancement, 4-Pin LFPAK NVMYS1D3N04CTWG
- RS Stock No.:
- 185-9246
- Mfr. Part No.:
- NVMYS1D3N04CTWG
- Manufacturer:
- onsemi
This image is representative of the product range
Bulk discount available
Subtotal (1 pack of 4 units)*
PHP478.24
(exc. VAT)
PHP535.64
(inc. VAT)
FREE delivery for orders over ₱3,000.00
Last RS stock
- Final 3,000 unit(s), ready to ship from another location
Units | Per Unit | Per Pack* |
|---|---|---|
| 4 - 36 | PHP119.56 | PHP478.24 |
| 40 - 396 | PHP117.168 | PHP468.67 |
| 400 - 1996 | PHP114.825 | PHP459.30 |
| 2000 - 3996 | PHP112.528 | PHP450.11 |
| 4000 + | PHP110.278 | PHP441.11 |
*price indicative
- RS Stock No.:
- 185-9246
- Mfr. Part No.:
- NVMYS1D3N04CTWG
- Manufacturer:
- onsemi
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | onsemi | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 252A | |
| Maximum Drain Source Voltage Vds | 40V | |
| Package Type | LFPAK | |
| Series | NVMYS1D3N04C | |
| Mount Type | Surface | |
| Pin Count | 4 | |
| Maximum Drain Source Resistance Rds | 1.15mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 75nC | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Power Dissipation Pd | 134W | |
| Maximum Operating Temperature | 175°C | |
| Height | 1.2mm | |
| Standards/Approvals | No | |
| Width | 4.25 mm | |
| Length | 5mm | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand onsemi | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 252A | ||
Maximum Drain Source Voltage Vds 40V | ||
Package Type LFPAK | ||
Series NVMYS1D3N04C | ||
Mount Type Surface | ||
Pin Count 4 | ||
Maximum Drain Source Resistance Rds 1.15mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 75nC | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Power Dissipation Pd 134W | ||
Maximum Operating Temperature 175°C | ||
Height 1.2mm | ||
Standards/Approvals No | ||
Width 4.25 mm | ||
Length 5mm | ||
Automotive Standard AEC-Q101 | ||
Non Compliant
- COO (Country of Origin):
- PH
Automotive Power MOSFET in a 5x6mm LFPAK package designed for compact and efficient designs and including high thermal performance. MOSFET and PPAP capable suitable for automotive applications requiring enhanced board level reliability.
Small Footprint (5x6 mm) for Compact Design
Low RDS(on) to Minimize Conduction Losses
Low QG and Capacitance to Minimize Driver Losses
LFPAK4 Package, Industry Standard
PPAP Capable
These Devices are Pb−Free
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