onsemi NVMJS2D5N06CL Type N-Channel MOSFET, 164 A, 60 V Enhancement, 8-Pin LFPAK
- RS Stock No.:
- 195-2506
- Mfr. Part No.:
- NVMJS2D5N06CLTWG
- Manufacturer:
- onsemi
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Supply shortage
Due to a global supply shortage, we don't know when this will be back in stock.
- RS Stock No.:
- 195-2506
- Mfr. Part No.:
- NVMJS2D5N06CLTWG
- Manufacturer:
- onsemi
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | onsemi | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 164A | |
| Maximum Drain Source Voltage Vds | 60V | |
| Series | NVMJS2D5N06CL | |
| Package Type | LFPAK | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 3.3mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 113W | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Typical Gate Charge Qg @ Vgs | 52nC | |
| Forward Voltage Vf | 1.2V | |
| Maximum Operating Temperature | 175°C | |
| Width | 4.9 mm | |
| Length | 5mm | |
| Standards/Approvals | No | |
| Height | 1.15mm | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand onsemi | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 164A | ||
Maximum Drain Source Voltage Vds 60V | ||
Series NVMJS2D5N06CL | ||
Package Type LFPAK | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 3.3mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 113W | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Typical Gate Charge Qg @ Vgs 52nC | ||
Forward Voltage Vf 1.2V | ||
Maximum Operating Temperature 175°C | ||
Width 4.9 mm | ||
Length 5mm | ||
Standards/Approvals No | ||
Height 1.15mm | ||
Automotive Standard AEC-Q101 | ||
Automotive Power MOSFET in a 5x6mm LFPAK package designed for compact and efficient designs and including high thermal performance. MOSFET and PPAP capable suitable for automotive applications requiring enhanced board level reliability.
Small Footprint (5x6 mm) for Compact Design
Low RDS(on) to Minimize Conduction Losses
Low QG and Capacitance to Minimize Driver Losses
LFPAK8 Package, Industry Standard
PPAP Capable
These Devices are Pb−Free
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