Infineon ISC Type N-Channel MOSFET, 164 A, 100 V Enhancement, 8-Pin PG-TDSON-8 ISC035N10NM5LF2ATMA1
- RS Stock No.:
- 349-141
- Mfr. Part No.:
- ISC035N10NM5LF2ATMA1
- Manufacturer:
- Infineon
Bulk discount available
View bulk pricing optionsSubtotal (1 pack of 2 units)*
PHP679.20
(exc. VAT)
PHP760.70
(inc. VAT)
FREE delivery for orders over ₱3,000.00
Temporarily out of stock
- 4,794 unit(s) shipping from June 03, 2027
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per Unit | Per Pack* |
|---|---|---|
| 2 - 18 | PHP339.60 | PHP679.20 |
| 20 - 198 | PHP305.78 | PHP611.56 |
| 200 - 998 | PHP281.825 | PHP563.65 |
| 1000 - 1998 | PHP261.625 | PHP523.25 |
| 2000 + | PHP234.38 | PHP468.76 |
*price indicative
- RS Stock No.:
- 349-141
- Mfr. Part No.:
- ISC035N10NM5LF2ATMA1
- Manufacturer:
- Infineon
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 164A | |
| Maximum Drain Source Voltage Vds | 100V | |
| Series | ISC | |
| Package Type | PG-TDSON-8 | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 3.5mΩ | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 1.2V | |
| Maximum Power Dissipation Pd | 217W | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | RoHS, IEC61249-2-21, JEDEC | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 164A | ||
Maximum Drain Source Voltage Vds 100V | ||
Series ISC | ||
Package Type PG-TDSON-8 | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 3.5mΩ | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 1.2V | ||
Maximum Power Dissipation Pd 217W | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals RoHS, IEC61249-2-21, JEDEC | ||
- COO (Country of Origin):
- CN
Infineon ISC Series MOSFET, 100V Maximum Drain Source Voltage, 164A Maximum Continuous Drain Current - ISC035N10NM5LF2ATMA1
This MOSFET is a high-current switching transistor designed for surface-mount power applications. It operates as an N-channel enhancement device suitable for managing substantial drain currents in compact electronic assemblies. The component is built to function across a wide thermal range and supports board-mounted configurations requiring low conduction losses and robust power handling.
Features and Benefits:
• Very low Rds(on) 3.5 mΩ reduces conduction losses during high current
• High continuous drain current 164A supports demanding load conditions
• Voltage rating 100V allows use in medium-voltage power stages
• Power dissipation 217W enables sustained thermal loading in constrained spaces
• Gate tolerance ±20V accommodates common drive schemes with margin
• Fast forward voltage 1.2V minimises switching conduction drop
• High continuous drain current 164A supports demanding load conditions
• Voltage rating 100V allows use in medium-voltage power stages
• Power dissipation 217W enables sustained thermal loading in constrained spaces
• Gate tolerance ±20V accommodates common drive schemes with margin
• Fast forward voltage 1.2V minimises switching conduction drop
Applications
• Suitable for automotive power converters operating in harsh temperatures
• Ideal for traction motor inverters requiring high continuous current
• Used with dc-dc converters needing low conduction-loss switches
• Can be used for server power stages where compact surface mounting matters
• Suitable for battery-management systems in high-power installations
• Ideal for traction motor inverters requiring high continuous current
• Used with dc-dc converters needing low conduction-loss switches
• Can be used for server power stages where compact surface mounting matters
• Suitable for battery-management systems in high-power installations
What mounting style is required on the PCB for this component?
It is supplied in a PG-TDSON-8 package and requires surface-mount land patterns compatible with that thermal pad and eight-pin footprint.
How does the device perform in extreme ambient temperatures?
The permitted operating range spans from -55 °C up to 175 °C, allowing operation in both sub-zero and elevated-temperature environments without derating outside normal thermal-design practice.
What switching behaviour should designers expect regarding gate drive?
The gate must be limited to a maximum of 20 V
typical drive schemes employ gate voltages below this threshold to ensure reliable enhancement switching.
Are there standards governing material and manufacturing conformity?
The device adheres to RoHS, IEC 61249-2-21 and JEDEC specifications related to materials and package definitions.
Related links
- Infineon ISC Type N-Channel OptiMOST Power-MOSFET 30 V Enhancement, 8-Pin PG-TDSON-8
- Infineon ISC Type N-Channel N-Channel Mosfet 120 V Enhancement, 8-Pin PG-TDSON-8 ISC078N12NM6ATMA1
- Infineon ISC Type N-Channel Power Transistor 135 V Enhancement, 8-Pin PG-TDSON-8 ISC046N13NM6ATMA1
- Infineon ISC Type N-Channel Power Transistor 40 V Enhancement, 8-Pin PG-TDSON-8 ISCH42N04LM7ATMA1
- Infineon ISC Type N-Channel MOSFET 120 V Enhancement, 8-Pin PG-TDSON-8 ISC110N12NM6ATMA1
- Infineon ISC Type N-Channel MOSFET 120 V Enhancement, 8-Pin PG-TDSON-8 ISC320N12LM6ATMA1
- Infineon ISC Type N-Channel Power Transistor 200 V Enhancement, 8-Pin PG-TDSON-8 FL ISC151N20NM6ATMA1
- Infineon ISC Type N-Channel Power Transistor 120 V Enhancement, 8-Pin PG-TDSON-8 FL ISC032N12LM6ATMA1
