onsemi NTMJS0D9N04CL Type N-Channel MOSFET, 330 A, 40 V Enhancement, 8-Pin LFPAK NTMJS0D9N04CLTWG
- RS Stock No.:
- 189-0485
- Mfr. Part No.:
- NTMJS0D9N04CLTWG
- Manufacturer:
- onsemi
This image is representative of the product range
Bulk discount available
Subtotal (1 pack of 5 units)*
PHP997.10
(exc. VAT)
PHP1,116.75
(inc. VAT)
FREE delivery for orders over ₱3,000.00
Temporarily out of stock
- Shipping from June 05, 2026
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Units | Per Unit | Per Pack* |
|---|---|---|
| 5 - 5 | PHP199.42 | PHP997.10 |
| 10 - 95 | PHP193.436 | PHP967.18 |
| 100 - 245 | PHP187.632 | PHP938.16 |
| 250 - 995 | PHP182.002 | PHP910.01 |
| 1000 + | PHP176.544 | PHP882.72 |
*price indicative
- RS Stock No.:
- 189-0485
- Mfr. Part No.:
- NTMJS0D9N04CLTWG
- Manufacturer:
- onsemi
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | onsemi | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 330A | |
| Maximum Drain Source Voltage Vds | 40V | |
| Series | NTMJS0D9N04CL | |
| Package Type | LFPAK | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 1.2mΩ | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 167W | |
| Typical Gate Charge Qg @ Vgs | 143nC | |
| Forward Voltage Vf | 1.2V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Operating Temperature | 175°C | |
| Height | 1.2mm | |
| Length | 5mm | |
| Standards/Approvals | No | |
| Width | 4.9 mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand onsemi | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 330A | ||
Maximum Drain Source Voltage Vds 40V | ||
Series NTMJS0D9N04CL | ||
Package Type LFPAK | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 1.2mΩ | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 167W | ||
Typical Gate Charge Qg @ Vgs 143nC | ||
Forward Voltage Vf 1.2V | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Operating Temperature 175°C | ||
Height 1.2mm | ||
Length 5mm | ||
Standards/Approvals No | ||
Width 4.9 mm | ||
Automotive Standard No | ||
Industrial Power MOSFET in a 5x6mm LFPAK package designed for compact and efficient designs and including high thermal performance.
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