Vishay Dual TrenchFET 2 Type N-Channel MOSFET, 60 A, 40 V Enhancement, 8-Pin SO-8 SQJ208EP-T1_GE3

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Subtotal (1 pack of 10 units)*

PHP719.70

(exc. VAT)

PHP806.10

(inc. VAT)

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Units
Per Unit
Per Pack*
10 - 40PHP71.97PHP719.70
50 - 90PHP69.81PHP698.10
100 - 490PHP65.621PHP656.21
500 - 990PHP59.715PHP597.15
1000 +PHP52.549PHP525.49

*price indicative

Packaging Options:
RS Stock No.:
188-5101
Mfr. Part No.:
SQJ208EP-T1_GE3
Manufacturer:
Vishay
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Brand

Vishay

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

60A

Maximum Drain Source Voltage Vds

40V

Series

TrenchFET

Package Type

SO-8

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

16mΩ

Channel Mode

Enhancement

Typical Gate Charge Qg @ Vgs

22nC

Forward Voltage Vf

0.77V

Maximum Power Dissipation Pd

48W

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

175°C

Transistor Configuration

Dual

Standards/Approvals

No

Length

5mm

Height

1.01mm

Number of Elements per Chip

2

Automotive Standard

AEC-Q101

Automotive Dual N-Channel 40 V (D-S) 175 °C MOSFETs.

TrenchFET® power MOSFET

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