Vishay Dual TrenchFET 2 Type N-Channel MOSFET, 4.5 A, 20 V Enhancement, 8-Pin SC-70 SIA938DJT-T1-GE3

This image is representative of the product range

View all MOSFETs
Bulk discount available

Subtotal (1 pack of 25 units)*

PHP791.35

(exc. VAT)

PHP886.30

(inc. VAT)

Add to Basket
Select or type quantity
In Stock
  • 5,975 unit(s) ready to ship from another location
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units
Per Unit
Per Pack*
25 - 25PHP31.654PHP791.35
50 - 75PHP28.489PHP712.23
100 - 225PHP25.64PHP641.00
250 - 975PHP23.075PHP576.88
1000 +PHP20.768PHP519.20

*price indicative

Packaging Options:
RS Stock No.:
228-2835
Mfr. Part No.:
SIA938DJT-T1-GE3
Manufacturer:
Vishay
Find similar products by selecting one or more attributes.
Select all

Brand

Vishay

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

4.5A

Maximum Drain Source Voltage Vds

20V

Package Type

SC-70

Series

TrenchFET

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

21.5mΩ

Channel Mode

Enhancement

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

3.5nC

Maximum Gate Source Voltage Vgs

12 V

Maximum Power Dissipation Pd

7.8W

Transistor Configuration

Dual

Maximum Operating Temperature

150°C

Standards/Approvals

No

Number of Elements per Chip

2

Automotive Standard

No

The Vishay Dual N-Channel MOSFET provides exceptional versatility for power management design.

Very low RDS(on) and excellent RDS x Qg

Figure-of-Merit (FOM) in an ultra compact

package footprint

Related links