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Vishay Dual TrenchFET 2 Type N-Channel MOSFET, 19.8 A, 20 V Enhancement, 8-Pin SO-8 SI4204DY-T1-GE3

RS Stock No.:: 180-8014
Mfr. Part No.:: SI4204DY-T1-GE3
Manufacturer:: Vishay

Vishay Dual TrenchFET 2 Type N-Channel MOSFET, 19.8 A, 20 V Enhancement, 8-Pin SO-8 SI4204DY-T1-GE3

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Bulk discount available

Subtotal (1 pack of 5 units)*

PHP480.20

(exc. VAT)

PHP537.80

(inc. VAT)

FREE delivery for orders over ₱3,000.00

Temporarily out of stock

Shipping from August 21, 2026

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Units	Per Unit	Per Pack*
5 - 45	PHP96.04	PHP480.20
50 - 95	PHP93.158	PHP465.79
100 - 495	PHP87.568	PHP437.84
500 - 995	PHP79.686	PHP398.43
1000 +	PHP70.124	PHP350.62

*price indicative

RS Stock No.:: 180-8014
Mfr. Part No.:: SI4204DY-T1-GE3
Manufacturer:: Vishay

Specifications

Technical data sheets

Legislation and Compliance

Product Details

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	Brand	Vishay
	Product Type	MOSFET
	Channel Type	Type N
	Maximum Continuous Drain Current Id	19.8A
	Maximum Drain Source Voltage Vds	20V
	Series	TrenchFET
	Package Type	SO-8
	Mount Type	Surface
	Pin Count	8
	Maximum Drain Source Resistance Rds	0.006Ω
	Channel Mode	Enhancement
	Maximum Power Dissipation Pd	3.25W
	Maximum Gate Source Voltage Vgs	20 V
	Minimum Operating Temperature	-55°C
	Typical Gate Charge Qg @ Vgs	30nC
	Transistor Configuration	Dual
	Maximum Operating Temperature	150°C
	Width	1.65 mm
	Height	1mm
	Standards/Approvals	No
	Length	3.05mm
	Number of Elements per Chip	2
	Automotive Standard	No

	Select all
	Brand Vishay
	Product Type MOSFET
	Channel Type Type N
	Maximum Continuous Drain Current Id 19.8A
	Maximum Drain Source Voltage Vds 20V
	Series TrenchFET
	Package Type SO-8
	Mount Type Surface
	Pin Count 8
	Maximum Drain Source Resistance Rds 0.006Ω
	Channel Mode Enhancement
	Maximum Power Dissipation Pd 3.25W
	Maximum Gate Source Voltage Vgs 20 V
	Minimum Operating Temperature -55°C
	Typical Gate Charge Qg @ Vgs 30nC
	Transistor Configuration Dual
	Maximum Operating Temperature 150°C
	Width 1.65 mm
	Height 1mm
	Standards/Approvals No
	Length 3.05mm
	Number of Elements per Chip 2
	Automotive Standard No

Datasheet

COO (Country of Origin):: CN

Vishay MOSFET

The Vishay surface mount dual N-channel MOSFET is a new age product with a drain-source voltage of 20V. It also has drain-source resistance of 4.6mohm at a gate-source voltage of 10V. It has continuous drain current of 19.8A. The MOSFET has a maximum power rating of 3.25W. It has been optimized for lower switching and conduction losses. The MOSFET offers excellent efficiency along with a long and productive life without compromising performance or functionality.

Features and Benefits

• Halogen free

• Lead (Pb) free

• Operating temperature ranges between -55°C and 150°C

• TrenchFET power MOSFET

Applications

• DC/DC Converter

• Fixed Telecommunication

• Notebook PC

Certifications

• ANSI/ESD S20.20:2014

• BS EN 61340-5-1:2007

• IEC 61249-2-21

• Rg tested

• UIS tested