onsemi 2N7000 Type N-Channel MOSFET, 200 mA, 60 V Enhancement, 3-Pin TO-92 2N7000-D26Z
- RS Stock No.:
- 184-4881
- Mfr. Part No.:
- 2N7000-D26Z
- Manufacturer:
- onsemi
This image is representative of the product range
Bulk discount available
View bulk pricing optionsSubtotal (1 pack of 100 units)*
PHP1,422.00
(exc. VAT)
PHP1,593.00
(inc. VAT)
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In Stock
- Plus 3,600 unit(s) shipping from August 31, 2026
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Units | Per Unit | Per Pack* |
|---|---|---|
| 100 - 400 | PHP14.22 | PHP1,422.00 |
| 500 - 900 | PHP13.794 | PHP1,379.40 |
| 1000 - 1400 | PHP13.38 | PHP1,338.00 |
| 1500 - 1900 | PHP12.978 | PHP1,297.80 |
| 2000 + | PHP12.589 | PHP1,258.90 |
*price indicative
- RS Stock No.:
- 184-4881
- Mfr. Part No.:
- 2N7000-D26Z
- Manufacturer:
- onsemi
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | onsemi | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 200mA | |
| Maximum Drain Source Voltage Vds | 60V | |
| Series | 2N7000 | |
| Package Type | TO-92 | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 9Ω | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 400mW | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Forward Voltage Vf | 0.88V | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Width | 4.19mm | |
| Height | 5.33mm | |
| Length | 5.2mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand onsemi | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 200mA | ||
Maximum Drain Source Voltage Vds 60V | ||
Series 2N7000 | ||
Package Type TO-92 | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 9Ω | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 400mW | ||
Maximum Gate Source Voltage Vgs 20V | ||
Forward Voltage Vf 0.88V | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Width 4.19mm | ||
Height 5.33mm | ||
Length 5.2mm | ||
Automotive Standard No | ||
- COO (Country of Origin):
- CN
These N-channel Small Signal MOSFETs are produced using ON Semiconductor's proprietary, high cell density, DMOS technology. These products have been designed to minimize on-state resistance while providing rugged, reliable, and fast switching performance. They can be used in most applications requiring up to 400 mA DC and can deliver pulsed currents up to 2 A. These products are particularly suited for low-voltage, low-current applications.
Voltage Controlled Small Signal Switch
High Saturation Current Capability
Rugged and Reliable
High Density Cell Design for Low RDS(ON)
Applications
Small Servo Motor Control
Power MOSFET Gate Drivers
Assorted Switching Applications
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