N-Channel MOSFET, 200 mA, 60 V, 3-Pin TO-92 onsemi 2N7000TA
- RS Stock No.:
- 124-1310
- Mfr. Part No.:
- 2N7000TA
- Manufacturer:
- onsemi
Temporarily out of stock - back order for despatch 29/08/2024, delivery within 10 working days from desptach date
Added
Price Each (On a Reel of 2000)
PHP5.335
(exc. VAT)
PHP5.975
(inc. VAT)
| Units | Per Unit | Per Reel* |
| 2000 - 4000 | PHP5.335 | PHP10,670.00 |
| 6000 - 8000 | PHP5.175 | PHP10,350.00 |
| 10000 - 18000 | PHP5.02 | PHP10,040.00 |
| 20000 + | PHP4.869 | PHP9,738.00 |
| *price indicative | ||
- RS Stock No.:
- 124-1310
- Mfr. Part No.:
- 2N7000TA
- Manufacturer:
- onsemi
Technical data sheets
Legislation and Compliance
Product Details
Advanced Power MOSFET, Fairchild Semiconductor
Avalanche Rugged Technology
Rugged Gate Oxide Technology
Lower Input Capacitance
Improved Gate Charge
Rugged Gate Oxide Technology
Lower Input Capacitance
Improved Gate Charge
MOSFET Transistors, ON Semi
ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.
Specifications
Attribute | Value |
|---|---|
| Channel Type | N |
| Maximum Continuous Drain Current | 200 mA |
| Maximum Drain Source Voltage | 60 V |
| Package Type | TO-92 |
| Mounting Type | Through Hole |
| Pin Count | 3 |
| Maximum Drain Source Resistance | 5 Ω |
| Channel Mode | Enhancement |
| Minimum Gate Threshold Voltage | 0.3V |
| Maximum Power Dissipation | 400 mW |
| Transistor Configuration | Single |
| Maximum Gate Source Voltage | -30 V, +30 V |
| Width | 4.19mm |
| Maximum Operating Temperature | +150 °C |
| Length | 5.2mm |
| Transistor Material | Si |
| Number of Elements per Chip | 1 |
| Height | 5.33mm |
| Minimum Operating Temperature | -55 °C |