onsemi 2N7000 Type N-Channel MOSFET, 200 mA, 60 V Enhancement, 3-Pin TO-92
- RS Stock No.:
- 184-4156
- Mfr. Part No.:
- 2N7000-D26Z
- Manufacturer:
- onsemi
This image is representative of the product range
Bulk discount available
Subtotal (1 reel of 2000 units)*
PHP13,902.00
(exc. VAT)
PHP15,570.00
(inc. VAT)
FREE delivery for orders over ₱3,000.00
Temporarily out of stock
- 2,000 unit(s) shipping from March 04, 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per Unit | Per Reel* |
|---|---|---|
| 2000 - 4000 | PHP6.951 | PHP13,902.00 |
| 6000 - 8000 | PHP6.743 | PHP13,486.00 |
| 10000 + | PHP6.54 | PHP13,080.00 |
*price indicative
- RS Stock No.:
- 184-4156
- Mfr. Part No.:
- 2N7000-D26Z
- Manufacturer:
- onsemi
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | onsemi | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 200mA | |
| Maximum Drain Source Voltage Vds | 60V | |
| Package Type | TO-92 | |
| Series | 2N7000 | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 9Ω | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 0.88V | |
| Maximum Power Dissipation Pd | 400mW | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 150°C | |
| Length | 5.2mm | |
| Width | 4.19 mm | |
| Standards/Approvals | No | |
| Height | 5.33mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand onsemi | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 200mA | ||
Maximum Drain Source Voltage Vds 60V | ||
Package Type TO-92 | ||
Series 2N7000 | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 9Ω | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 0.88V | ||
Maximum Power Dissipation Pd 400mW | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 150°C | ||
Length 5.2mm | ||
Width 4.19 mm | ||
Standards/Approvals No | ||
Height 5.33mm | ||
Automotive Standard No | ||
- COO (Country of Origin):
- CN
These N-channel Small Signal MOSFETs are produced using ON Semiconductor's proprietary, high cell density, DMOS technology. These products have been designed to minimize on-state resistance while providing rugged, reliable, and fast switching performance. They can be used in most applications requiring up to 400 mA DC and can deliver pulsed currents up to 2 A. These products are particularly suited for low-voltage, low-current applications.
Voltage Controlled Small Signal Switch
High Saturation Current Capability
Rugged and Reliable
High Density Cell Design for Low RDS(ON)
Applications
Small Servo Motor Control
Power MOSFET Gate Drivers
Assorted Switching Applications
Related links
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