Microchip 2N7000 Type N-Channel MOSFET, 200 mA, 60 V Enhancement, 3-Pin TO-92

RS Stock No.:: 177-9588
Mfr. Part No.:: 2N7000-G
Manufacturer:: Microchip

Microchip 2N7000 Type N-Channel MOSFET, 200 mA, 60 V Enhancement, 3-Pin TO-92

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Subtotal (1 bag of 1000 units)*

PHP20,384.00

(exc. VAT)

PHP22,830.00

(inc. VAT)

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3,000 unit(s) ready to ship from another location

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Units	Per Unit	Per Bag*
1000 +	PHP20.384	PHP20,384.00

*price indicative

RS Stock No.:: 177-9588
Mfr. Part No.:: 2N7000-G
Manufacturer:: Microchip

Specifications

Technical data sheets

Legislation and Compliance

Product Details

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	Brand	Microchip
	Product Type	MOSFET
	Channel Type	Type N
	Maximum Continuous Drain Current Id	200mA
	Maximum Drain Source Voltage Vds	60V
	Package Type	TO-92
	Series	2N7000
	Mount Type	Through Hole
	Pin Count	3
	Maximum Drain Source Resistance Rds	5.3Ω
	Channel Mode	Enhancement
	Forward Voltage Vf	0.85V
	Minimum Operating Temperature	-55°C
	Maximum Power Dissipation Pd	1W
	Maximum Gate Source Voltage Vgs	30 V
	Maximum Operating Temperature	150°C
	Length	5.08mm
	Width	4.06 mm
	Standards/Approvals	No
	Height	5.33mm
	Automotive Standard	No

	Select all
	Brand Microchip
	Product Type MOSFET
	Channel Type Type N
	Maximum Continuous Drain Current Id 200mA
	Maximum Drain Source Voltage Vds 60V
	Package Type TO-92
	Series 2N7000
	Mount Type Through Hole
	Pin Count 3
	Maximum Drain Source Resistance Rds 5.3Ω
	Channel Mode Enhancement
	Forward Voltage Vf 0.85V
	Minimum Operating Temperature -55°C
	Maximum Power Dissipation Pd 1W
	Maximum Gate Source Voltage Vgs 30 V
	Maximum Operating Temperature 150°C
	Length 5.08mm
	Width 4.06 mm
	Standards/Approvals No
	Height 5.33mm
	Automotive Standard No

Datasheet

COO (Country of Origin):: TW

Microchip Technology MOSFET

The Microchip Technology through-hole mount N-channel MOSFET is a new age product with a drain-source voltage of 60V and a maximum gate-source voltage of 30V. It has drain-source resistance of 5ohms at a gate-source voltage of 10V. It has continuous drain current of 200mA and maximum power dissipation of 1W. The minimum and a maximum driving voltage for this MOSFET is 4.5V and 10V respectively. The MOSFET is an enhancement mode (normally off) MOSFET that utilizes a vertical DMOS structure and well-proven, silicon gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and the high input impedance and positive temperature coefficient inherent in MOS devices. A significant characteristic of all MOS structures, this device is free from thermal runaway and thermally induced secondary breakdown. This vertical DMOS FET has been optimized for lower switching and conduction losses. The MOSFET offers excellent efficiency along with a long and productive life without compromising performance or functionality.

Features and Benefits

• Ease of paralleling

• Excellent thermal stability

• Free from secondary breakdown

• High input impedance and high gain

• Integral source drain diode

• Low CISS and fast switching speeds

• Low power drive requirement

• Operating temperature ranges between -55°C and 150°C

Applications

• Amplifiers

• Converters

• Drivers: relays, hammers, solenoids, lamps, memories, displays, bipolar transistors, etc.

• Motor controls

• Power supply circuits

• Switches

Certifications

• ANSI/ESD S20.20:2014

• BS EN 61340-5-1:2007

• JEDEC