Vishay TrenchFET Type N-Channel MOSFET, 8 A, 40 V Enhancement, 3-Pin SOT-23 SQ2318AES-T1_GE3
- RS Stock No.:
- 180-8032
- Mfr. Part No.:
- SQ2318AES-T1_GE3
- Manufacturer:
- Vishay
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- RS Stock No.:
- 180-8032
- Mfr. Part No.:
- SQ2318AES-T1_GE3
- Manufacturer:
- Vishay
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 8A | |
| Maximum Drain Source Voltage Vds | 40V | |
| Package Type | SOT-23 | |
| Series | TrenchFET | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 36mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 8.7nC | |
| Forward Voltage Vf | 1.2V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Power Dissipation Pd | 3W | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | No | |
| Length | 3.04mm | |
| Height | 1.12mm | |
| Width | 2.64 mm | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand Vishay | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 8A | ||
Maximum Drain Source Voltage Vds 40V | ||
Package Type SOT-23 | ||
Series TrenchFET | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 36mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 8.7nC | ||
Forward Voltage Vf 1.2V | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Power Dissipation Pd 3W | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals No | ||
Length 3.04mm | ||
Height 1.12mm | ||
Width 2.64 mm | ||
Automotive Standard AEC-Q101 | ||
- COO (Country of Origin):
- CN
Vishay MOSFET
The Vishay surface mount N-channel MOSFET is a new age product with a drain-source voltage of 40V and a maximum gate-source voltage of 20V. It has drain-source resistance of 31mohm at a gate-source voltage of 10V. It has a maximum power dissipation of 3W and continuous drain current of 8A. The minimum and a maximum driving voltage for this MOSFET is 4.5V and 10V respectively. It has application in load switches for portable devices. The MOSFET has been optimized for lower switching and conduction losses. The MOSFET offers excellent efficiency along with a long and productive life without compromising performance or functionality.
Features and Benefits
• Halogen free
• Lead (Pb) free
• Operating temperature ranges between -55°C and 175°C
• TrenchFET power MOSFET
Certifications
• AEC-Q101
• ANSI/ESD S20.20:2014
• BS EN 61340-5-1:2007
• IEC 61249-2-21
• Rg tested
• UIS tested
Related links
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