Vishay TrenchFET Type N-Channel MOSFET, 3.6 A, 30 V Enhancement, 3-Pin SOT-23 SI2300DS-T1-GE3

RS Stock No.:: 180-7944
Mfr. Part No.:: SI2300DS-T1-GE3
Manufacturer:: Vishay

Vishay TrenchFET Type N-Channel MOSFET, 3.6 A, 30 V Enhancement, 3-Pin SOT-23 SI2300DS-T1-GE3

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Subtotal (1 pack of 25 units)*

PHP413.325

(exc. VAT)

PHP462.925

(inc. VAT)

FREE delivery for orders over ₱3,000.00

Last RS stock

Final 4,675 unit(s), ready to ship from another location

Units	Per Unit	Per Pack*
25 - 25	PHP16.533	PHP413.33
50 - 75	PHP16.12	PHP403.00
100 - 475	PHP15.716	PHP392.90
500 - 975	PHP15.324	PHP383.10
1000 +	PHP14.94	PHP373.50

*price indicative

RS Stock No.:: 180-7944
Mfr. Part No.:: SI2300DS-T1-GE3
Manufacturer:: Vishay

Specifications

Technical data sheets

Legislation and Compliance

Product Details

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	Brand	Vishay
	Product Type	MOSFET
	Channel Type	Type N
	Maximum Continuous Drain Current Id	3.6A
	Maximum Drain Source Voltage Vds	30V
	Package Type	SOT-23
	Series	TrenchFET
	Mount Type	Surface
	Pin Count	3
	Maximum Drain Source Resistance Rds	68mΩ
	Channel Mode	Enhancement
	Forward Voltage Vf	1.2V
	Typical Gate Charge Qg @ Vgs	3nC
	Maximum Gate Source Voltage Vgs	12 V
	Minimum Operating Temperature	-55°C
	Maximum Power Dissipation Pd	1.1W
	Maximum Operating Temperature	150°C
	Width	2.64 mm
	Height	1.12mm
	Standards/Approvals	No
	Length	3.04mm
	Automotive Standard	No

	Select all
	Brand Vishay
	Product Type MOSFET
	Channel Type Type N
	Maximum Continuous Drain Current Id 3.6A
	Maximum Drain Source Voltage Vds 30V
	Package Type SOT-23
	Series TrenchFET
	Mount Type Surface
	Pin Count 3
	Maximum Drain Source Resistance Rds 68mΩ
	Channel Mode Enhancement
	Forward Voltage Vf 1.2V
	Typical Gate Charge Qg @ Vgs 3nC
	Maximum Gate Source Voltage Vgs 12 V
	Minimum Operating Temperature -55°C
	Maximum Power Dissipation Pd 1.1W
	Maximum Operating Temperature 150°C
	Width 2.64 mm
	Height 1.12mm
	Standards/Approvals No
	Length 3.04mm
	Automotive Standard No

Datasheet

COO (Country of Origin):: CN

Vishay MOSFET

The Vishay surface mount N-channel MOSFET is a new age product with a drain-source voltage of 30V and a maximum gate-source voltage of 12V. It has drain-source resistance of 68mohm at a gate-source voltage of 4.5V. It has a maximum power dissipation of 1.7W and continuous drain current of 3.6A. The minimum and a maximum driving voltage for this transistor are 2.5V and 4.5V respectively. The MOSFET has been optimized for lower switching and conduction losses. The MOSFET offers excellent efficiency along with a long and productive life without compromising performance or functionality.

Features and Benefits

• Halogen free

• Lead (Pb) free

• Operating temperature ranges between -55°C and 150°C

• TrenchFET power MOSFET

Applications

• DC/DC converter for portable devices

• Load switch

Certifications

• ANSI/ESD S20.20:2014

• BS EN 61340-5-1:2007

• IEC 61249-2-21

• Rg tested